APA引文

Ong, Z. K., & Ing, N. G. (2020). Studies of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs). Nanyang Technological University.

Chicago Style Citation

Ong, Zi Kai, and Ng Geok Ing. Studies of Gallium Nitride (GaN) Based High Electron Mobility Transistors (HEMTs). Nanyang Technological University, 2020.

MLA引文

Ong, Zi Kai, and Ng Geok Ing. Studies of Gallium Nitride (GaN) Based High Electron Mobility Transistors (HEMTs). Nanyang Technological University, 2020.

警告：這些引文格式不一定是100％准確.