Rapid crystallization of all-inorganic CsPbBr3 perovskite for high-brightness light-emitting diodes
Research into perovskite-based light-emitting diodes (PeLEDs) has been rapidly gaining momentum since the initial reports of green-emitting methylammonium lead bromide (CH3NH3PbBr3)-based devices were published. However, issues pertaining to its stability and morphological control still hamper progr...
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sg-ntu-dr.10356-1409022021-01-14T07:13:42Z Rapid crystallization of all-inorganic CsPbBr3 perovskite for high-brightness light-emitting diodes Ng, Yan Fong Nur Fadilah Jamaludin Yantara, Natalia Li, Mingjie Irukuvarjula, Venkata Kameshwar Rao Demir, Hilmi Volkan Sum, Tze Chien Mhaisalkar, Subodh Mathews, Nripan School of Electrical and Electronic Engineering School of Materials Science and Engineering School of Physical and Mathematical Sciences Interdisciplinary Graduate School (IGS) LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays Energy Research Institute @ NTU (ERI@N) Engineering::Materials Grain Crystallization Research into perovskite-based light-emitting diodes (PeLEDs) has been rapidly gaining momentum since the initial reports of green-emitting methylammonium lead bromide (CH3NH3PbBr3)-based devices were published. However, issues pertaining to its stability and morphological control still hamper progress toward high performing devices. Solvent engineering, a technique typically employed to modulate film crystallization, offers little opportunity for scale-up due to the tendency for inhomogeneous film growth and low degree of reproducibility. Here, we propose and show a simple gas-facilitated process to deposit a stable, all-inorganic perovskite CsPbBr3 film. The formation of smaller and less percolated grains, which gives rise to enhanced optical properties, highlights the importance of spatial charge confinement in the film. Consequently, the performance of our PeLEDs shows great improvement, with luminance as high as 8218 cd m–2 and turn-on voltage as low as 2.4 V. Concomitantly, the current efficiency and EQE of our device were increased to 0.72 cd A–1 and 0.088%, respectively. High reproducibility in the performance of PeLEDs fabricated using this process opens the path for large-area devices. NRF (Natl Research Foundation, S’pore) ASTAR (Agency for Sci., Tech. and Research, S’pore) MOE (Min. of Education, S’pore) Published version 2020-06-02T14:02:53Z 2020-06-02T14:02:53Z 2017 Journal Article Ng, Y. F., Nur Fadilah Jamaludin, Yantara, N., Li, M., Irukuvarjula, V. K. R., Demir, H. V., . . . Mathews, N. (2017). Rapid crystallization of all-inorganic CsPbBr3 perovskite for high-brightness light-emitting diodes. Acs Omega, 2(6), 2757-2764. doi:10.1021/acsomega.7b00360 2470-1343 https://hdl.handle.net/10356/140902 10.1021/acsomega.7b00360 6 2 2757 2764 en ACS Omega © 2017 American Chemical Society. This is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposes. application/pdf |
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Engineering::Materials Grain Crystallization Ng, Yan Fong Nur Fadilah Jamaludin Yantara, Natalia Li, Mingjie Irukuvarjula, Venkata Kameshwar Rao Demir, Hilmi Volkan Sum, Tze Chien Mhaisalkar, Subodh Mathews, Nripan Rapid crystallization of all-inorganic CsPbBr3 perovskite for high-brightness light-emitting diodes |
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Research into perovskite-based light-emitting diodes (PeLEDs) has been rapidly gaining momentum since the initial reports of green-emitting methylammonium lead bromide (CH3NH3PbBr3)-based devices were published. However, issues pertaining to its stability and morphological control still hamper progress toward high performing devices. Solvent engineering, a technique typically employed to modulate film crystallization, offers little opportunity for scale-up due to the tendency for inhomogeneous film growth and low degree of reproducibility. Here, we propose and show a simple gas-facilitated process to deposit a stable, all-inorganic perovskite CsPbBr3 film. The formation of smaller and less percolated grains, which gives rise to enhanced optical properties, highlights the importance of spatial charge confinement in the film. Consequently, the performance of our PeLEDs shows great improvement, with luminance as high as 8218 cd m–2 and turn-on voltage as low as 2.4 V. Concomitantly, the current efficiency and EQE of our device were increased to 0.72 cd A–1 and 0.088%, respectively. High reproducibility in the performance of PeLEDs fabricated using this process opens the path for large-area devices. |
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School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Ng, Yan Fong Nur Fadilah Jamaludin Yantara, Natalia Li, Mingjie Irukuvarjula, Venkata Kameshwar Rao Demir, Hilmi Volkan Sum, Tze Chien Mhaisalkar, Subodh Mathews, Nripan |
format |
Article |
author |
Ng, Yan Fong Nur Fadilah Jamaludin Yantara, Natalia Li, Mingjie Irukuvarjula, Venkata Kameshwar Rao Demir, Hilmi Volkan Sum, Tze Chien Mhaisalkar, Subodh Mathews, Nripan |
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Ng, Yan Fong |
title |
Rapid crystallization of all-inorganic CsPbBr3 perovskite for high-brightness light-emitting diodes |
title_short |
Rapid crystallization of all-inorganic CsPbBr3 perovskite for high-brightness light-emitting diodes |
title_full |
Rapid crystallization of all-inorganic CsPbBr3 perovskite for high-brightness light-emitting diodes |
title_fullStr |
Rapid crystallization of all-inorganic CsPbBr3 perovskite for high-brightness light-emitting diodes |
title_full_unstemmed |
Rapid crystallization of all-inorganic CsPbBr3 perovskite for high-brightness light-emitting diodes |
title_sort |
rapid crystallization of all-inorganic cspbbr3 perovskite for high-brightness light-emitting diodes |
publishDate |
2020 |
url |
https://hdl.handle.net/10356/140902 |
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1690658459508277248 |