XPM-induced modulation instability in silicon-on-insulator nano-waveguides and the impact of nonlinear losses
We have carried out an extensive theoretical study of cross-phase modulation induced modulation instability (MI) in a silicon-on-insulator nano-waveguide for two co-propagating waves. The analysis has been performed for two sets (with zero and varying non-zero walk-off parameter) of three different...
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/141050 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | We have carried out an extensive theoretical study of cross-phase modulation induced modulation instability (MI) in a silicon-on-insulator nano-waveguide for two co-propagating waves. The analysis has been performed for two sets (with zero and varying non-zero walk-off parameter) of three different cases: when the two waves are in (i) normal dispersion regime, (ii) anomalous dispersion regime, and (iii) different dispersion regimes. In particularly, we have discussed the nonlinear losses due to two-photon absorption and free-carrier absorption. Further, we have investigated the impact of the walk-off parameter on the MI gain spectrum in the above three cases. |
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