APA引文

Lau, S. H., & Ing, N. G. (2020). Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT). Nanyang Technological University.

Chicago Style Citation

Lau, Sien Hui, and Ng Geok Ing. Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT). Nanyang Technological University, 2020.

MLA引文

Lau, Sien Hui, and Ng Geok Ing. Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT). Nanyang Technological University, 2020.