Tilted magnetisation for domain wall pinning in racetrack memory

The interest in spintronics devices based on domain wall (DW) motion has gained attention for many years. However, the stochastic behaviour of DW motion is still a fundamental issue for the practical implementation of DW devices. In this study, we demonstrate that effective domain wall pinning can b...

Full description

Saved in:
Bibliographic Details
Main Authors: Jin, Tianli, Tan, Funan, Ang, Calvin Ching Ian, Gan, Weiliang, Cao, Jiangwei, Lew, Wen Siang, Piramanayagam, S. N.
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2020
Subjects:
Online Access:https://hdl.handle.net/10356/141985
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-141985
record_format dspace
spelling sg-ntu-dr.10356-1419852023-02-28T19:25:17Z Tilted magnetisation for domain wall pinning in racetrack memory Jin, Tianli Tan, Funan Ang, Calvin Ching Ian Gan, Weiliang Cao, Jiangwei Lew, Wen Siang Piramanayagam, S. N. School of Physical and Mathematical Sciences Science::Physics::Electricity and magnetism Domain Wall Memory Domain Wall Pinning The interest in spintronics devices based on domain wall (DW) motion has gained attention for many years. However, the stochastic behaviour of DW motion is still a fundamental issue for the practical implementation of DW devices. In this study, we demonstrate that effective domain wall pinning can be achieved by using exchange interaction between Co/Ni multilayer with perpendicular magnetic anisotropy (PMA) and Co layer with in-plane magnetic anisotropy (IMA) to create locally tilted magnetisation. The strength of exchange interaction is tuned by varying the thickness of spacer layer Pt between the PMA and IMA layers, thus forming different tilt angles. Micromagnetic simulations were performed to verify the relation between pinning field and magnetisation tilt angle. Polar Kerr microscopy shows the current-driven DW pinning and depinning in the Co/Ni multilayer device with Co crossbars, where the thickness of spacer layer Pt is 1 nm. The proposed approach can potentially be used in future DW memory device applications. Accepted version 2020-06-12T12:52:00Z 2020-06-12T12:52:00Z 2019 Journal Article Jin, T., Tan, F., Ang, C. C. I., Gan, W., Cao, J., Lew, W. S., & Piramanayagam, S. N. (2019). Tilted magnetisation for domain wall pinning in racetrack memory. Journal of Magnetism and Magnetic Materials, 489, 165410-. doi:10.1016/j.jmmm.2019.165410 0304-8853 https://hdl.handle.net/10356/141985 10.1016/j.jmmm.2019.165410 489 en Journal of Magnetism and Magnetic Materials © 2019 Elsevier B.V. All rights reserved. This paper was published in Journal of Magnetism and Magnetic Materials and is made available with permission of Elsevier B.V. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Science::Physics::Electricity and magnetism
Domain Wall Memory
Domain Wall Pinning
spellingShingle Science::Physics::Electricity and magnetism
Domain Wall Memory
Domain Wall Pinning
Jin, Tianli
Tan, Funan
Ang, Calvin Ching Ian
Gan, Weiliang
Cao, Jiangwei
Lew, Wen Siang
Piramanayagam, S. N.
Tilted magnetisation for domain wall pinning in racetrack memory
description The interest in spintronics devices based on domain wall (DW) motion has gained attention for many years. However, the stochastic behaviour of DW motion is still a fundamental issue for the practical implementation of DW devices. In this study, we demonstrate that effective domain wall pinning can be achieved by using exchange interaction between Co/Ni multilayer with perpendicular magnetic anisotropy (PMA) and Co layer with in-plane magnetic anisotropy (IMA) to create locally tilted magnetisation. The strength of exchange interaction is tuned by varying the thickness of spacer layer Pt between the PMA and IMA layers, thus forming different tilt angles. Micromagnetic simulations were performed to verify the relation between pinning field and magnetisation tilt angle. Polar Kerr microscopy shows the current-driven DW pinning and depinning in the Co/Ni multilayer device with Co crossbars, where the thickness of spacer layer Pt is 1 nm. The proposed approach can potentially be used in future DW memory device applications.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Jin, Tianli
Tan, Funan
Ang, Calvin Ching Ian
Gan, Weiliang
Cao, Jiangwei
Lew, Wen Siang
Piramanayagam, S. N.
format Article
author Jin, Tianli
Tan, Funan
Ang, Calvin Ching Ian
Gan, Weiliang
Cao, Jiangwei
Lew, Wen Siang
Piramanayagam, S. N.
author_sort Jin, Tianli
title Tilted magnetisation for domain wall pinning in racetrack memory
title_short Tilted magnetisation for domain wall pinning in racetrack memory
title_full Tilted magnetisation for domain wall pinning in racetrack memory
title_fullStr Tilted magnetisation for domain wall pinning in racetrack memory
title_full_unstemmed Tilted magnetisation for domain wall pinning in racetrack memory
title_sort tilted magnetisation for domain wall pinning in racetrack memory
publishDate 2020
url https://hdl.handle.net/10356/141985
_version_ 1759857837638418432