Nanoscale conductive filament with alternating rectification as an artificial synapse building block

• Main Authors: Berco, Dan, Zhou, Yu, Gollu, Sankara Rao, Kalaga, Pranav Sairam, Kole, Abhisek, Mohamed Hassan, Ang, Diing Shenp
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Synaptic Gap Junctions; Electrical Synapses
• Online Access: https://hdl.handle.net/10356/143594
• Institution: Nanyang Technological University

A popular approach for resistive memory (RRAM)-based hardware implementation of neural networks utilizes one (or two) device that functions as an analog synapse in a crossbar structure of perpendicular pre- and postsynaptic neurons. An ideal fully automated, large-scale artificial neural network, wh...