Stacking-dependent interlayer phonons in 3R and 2H MoS2

• المؤلفون الرئيسيون: Van Baren, Jeremiah, Ye, Gaihua, Yan, Jia-An, Ye, Zhipeng, Rezaie, Pouyan, Yu, Peng, Liu, Zheng, He, Rui, Lui, Chun Hung
• مؤلفون آخرون: School of Materials Science and Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Materials; 3R MoS2; 2H MoS2
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/143595

We have investigated the interlayer shear and breathing phonon modes in MoS2 with pure 3R and 2H stacking order by using polarization-dependent ultralow-frequency Raman spectroscopy. We observe up to three shear branches and four breathing branches in MoS2 with thickness from 2 to 13 layers. The bre...