Zheng, Y., Agrawal, M., Dharmarasu, N., Radhakrishnan, K., Patwal, S., & Engineering, S. o. E. a. E. (2020). A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy.
استشهاد بنمط شيكاغوZheng, Y., Manvi Agrawal, Nethaji Dharmarasu, K. Radhakrishnan, Shashank Patwal, و School of Electrical and Electronic Engineering. A Study On Ga – Si Interdiffusion During (Al)GaN/AlN Growth On Si By Plasma Assisted Molecular Beam Epitaxy. 2020.
MLA استشهادZheng, Y., et al. A Study On Ga – Si Interdiffusion During (Al)GaN/AlN Growth On Si By Plasma Assisted Molecular Beam Epitaxy. 2020.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.