Stoichiometric engineering of chalcogenide semiconductor alloys for nanophotonic applications
A variety of alternative plasmonic and dielectric material platforms-among them nitrides, semiconductors, and conductive oxides-have come to prominence in recent years as means to address the shortcomings of noble metals (including Joule losses, cost, and passive character) in certain nanophotonic a...
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| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/144736 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | A variety of alternative plasmonic and dielectric material platforms-among them nitrides, semiconductors, and conductive oxides-have come to prominence in recent years as means to address the shortcomings of noble metals (including Joule losses, cost, and passive character) in certain nanophotonic and optical-frequency metamaterial applications. Here, it is shown that chalcogenide semiconductor alloys offer a uniquely broad pallet of optical properties, complementary to those of existing material platforms, which can be controlled by stoichiometric design. Using combinatorial high-throughput techniques, the extraordinary epsilon-near-zero, plasmonic, and low/high-index characteristics of Bi:Sb:Te alloys are explored. Depending upon composition they can, for example, have plasmonic figures of merit higher than conductive oxides and nitrides across the entire UV-NIR range, and higher than gold below 550 nm; present dielectric figures of merit better than conductive oxides at near-infrared telecommunications wavelengths; and exhibit record-breaking refractive indices as low as 0.7 and as high as 11.5. |
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