A wideband variable-gain amplifier with a negative exponential generation in 40-nm CMOS technology

A wideband variable-gain amplifier (VGA) with a negative exponential generation using 40 nm CMOS technology is reported. By compensating a single-branch negative exponential generator (NEG) which features a composite of dual Taylor series, the proposed negative exponential generation further extends...

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Main Authors:	Dong, Yangtao, Kong, Lingshan, Boon, Chirn Chye, Liu, Zhe, Li, Chenyang, Yang, Kaituo, Zhou, Ao
Other Authors:	School of Electrical and Electronic Engineering
Format:	Conference or Workshop Item
Language:	English
Published:	2020
Subjects:	Engineering Variable Gain Amplifier CMOS Technology
Online Access:	https://hdl.handle.net/10356/144775
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-1447752020-11-24T03:03:40Z A wideband variable-gain amplifier with a negative exponential generation in 40-nm CMOS technology Dong, Yangtao Kong, Lingshan Boon, Chirn Chye Liu, Zhe Li, Chenyang Yang, Kaituo Zhou, Ao School of Electrical and Electronic Engineering 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) VIRTUS, IC Design Centre of Excellence Engineering Variable Gain Amplifier CMOS Technology A wideband variable-gain amplifier (VGA) with a negative exponential generation using 40 nm CMOS technology is reported. By compensating a single-branch negative exponential generator (NEG) which features a composite of dual Taylor series, the proposed negative exponential generation further extends the dB-linear range. The measurement results show the overall VGA achieves a dB-linear range of 51 dB (-34 ~ 17dB) with a gain error less than ± 1 dB. In addition, the bandwidth is around 7 GHz under different gain settings. The core circuit draws 24.6 mA current from a 1.1 V power supply (excluding the output buffer) and occupies an active area of 0.038 mm2. Agency for Science, Technology and Research (ASTAR) Accepted version This research is supported by ASTAR under its RIE2020 Advanced Manufacturing and Engineering (AME) Industry Alignment Fund - Pre Positioning (IAF-PP) (Award A19D6a0053). 2020-11-24T02:53:40Z 2020-11-24T02:53:40Z 2020 Conference Paper Dong, Y., Kong, L., Boon, C. C., Liu, Z., Li, C., Yang, K., & Zhou, A. (2020). A wideband variable-gain amplifier with a negative exponential generation in 40-nm CMOS technology. Proceedings of the 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 375-378. doi:10.1109/RFIC49505.2020.9218416 2375-0995 https://hdl.handle.net/10356/144775 10.1109/RFIC49505.2020.9218416 375 378 en Award A19D6a0053 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/RFIC49505.2020.9218416 application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	Engineering Variable Gain Amplifier CMOS Technology
spellingShingle	Engineering Variable Gain Amplifier CMOS Technology Dong, Yangtao Kong, Lingshan Boon, Chirn Chye Liu, Zhe Li, Chenyang Yang, Kaituo Zhou, Ao A wideband variable-gain amplifier with a negative exponential generation in 40-nm CMOS technology
description	A wideband variable-gain amplifier (VGA) with a negative exponential generation using 40 nm CMOS technology is reported. By compensating a single-branch negative exponential generator (NEG) which features a composite of dual Taylor series, the proposed negative exponential generation further extends the dB-linear range. The measurement results show the overall VGA achieves a dB-linear range of 51 dB (-34 ~ 17dB) with a gain error less than ± 1 dB. In addition, the bandwidth is around 7 GHz under different gain settings. The core circuit draws 24.6 mA current from a 1.1 V power supply (excluding the output buffer) and occupies an active area of 0.038 mm2.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Dong, Yangtao Kong, Lingshan Boon, Chirn Chye Liu, Zhe Li, Chenyang Yang, Kaituo Zhou, Ao
format	Conference or Workshop Item
author	Dong, Yangtao Kong, Lingshan Boon, Chirn Chye Liu, Zhe Li, Chenyang Yang, Kaituo Zhou, Ao
author_sort	Dong, Yangtao
title	A wideband variable-gain amplifier with a negative exponential generation in 40-nm CMOS technology
title_short	A wideband variable-gain amplifier with a negative exponential generation in 40-nm CMOS technology
title_full	A wideband variable-gain amplifier with a negative exponential generation in 40-nm CMOS technology
title_fullStr	A wideband variable-gain amplifier with a negative exponential generation in 40-nm CMOS technology
title_full_unstemmed	A wideband variable-gain amplifier with a negative exponential generation in 40-nm CMOS technology
title_sort	wideband variable-gain amplifier with a negative exponential generation in 40-nm cmos technology
publishDate	2020
url	https://hdl.handle.net/10356/144775
_version_	1688665447942062080

A wideband variable-gain amplifier with a negative exponential generation in 40-nm CMOS technology

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