A 40 GHz on-chip power combine load for mm-wave power amplifier

• المؤلفون الرئيسيون: Lin, Jiafu, Zhang, Gary, Boon, Chirn Chye
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; CMOS PA; Isolation
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/144858

Millimeter‐wave (Mm‐Wave) communication have been considered as one of the most potential candidate of the 5th generation communication (5G). However, the low breakdown voltage of CMOS challenges RF circuits design in various aspects especially for power amplifier (PA). The maximum available power f...