A 40 GHz on-chip power combine load for mm-wave power amplifier

• Main Authors: Lin, Jiafu, Zhang, Gary, Boon, Chirn Chye
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; CMOS PA; Isolation
• Online Access: https://hdl.handle.net/10356/144858
• Institution: Nanyang Technological University

Millimeter‐wave (Mm‐Wave) communication have been considered as one of the most potential candidate of the 5th generation communication (5G). However, the low breakdown voltage of CMOS challenges RF circuits design in various aspects especially for power amplifier (PA). The maximum available power f...