A 0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦c

This paper describes the design of a high-accuracy smart temperature sensor in the 40 nm standard CMOS process. Due to process scaling, the high threshold voltages, large leakage currents and low intrinsic gains, etc., cause the realization of conventional high performance analog circuits to become...

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Bibliographic Details
Main Authors: Zhu, Di, Siek, Liter
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2019
Subjects:
Online Access:https://hdl.handle.net/10356/85863
http://hdl.handle.net/10220/48291
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Institution: Nanyang Technological University
Language: English