A 0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦c

• Main Authors: Zhu, Di, Siek, Liter
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: 40 nm Standard CMOS; DRNTU::Engineering::Electrical and electronic engineering; Temperature Sensor
• Online Access: https://hdl.handle.net/10356/85863; http://hdl.handle.net/10220/48291
• Institution: Nanyang Technological University

This paper describes the design of a high-accuracy smart temperature sensor in the 40 nm standard CMOS process. Due to process scaling, the high threshold voltages, large leakage currents and low intrinsic gains, etc., cause the realization of conventional high performance analog circuits to become...