A 0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦c

This paper describes the design of a high-accuracy smart temperature sensor in the 40 nm standard CMOS process. Due to process scaling, the high threshold voltages, large leakage currents and low intrinsic gains, etc., cause the realization of conventional high performance analog circuits to become...

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Main Authors:	Zhu, Di, Siek, Liter
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2019
Subjects:	40 nm Standard CMOS DRNTU::Engineering::Electrical and electronic engineering Temperature Sensor
Online Access:	https://hdl.handle.net/10356/85863 http://hdl.handle.net/10220/48291
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-85863
record_format	dspace
spelling	sg-ntu-dr.10356-858632020-03-07T13:57:29Z A 0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦c Zhu, Di Siek, Liter School of Electrical and Electronic Engineering 40 nm Standard CMOS DRNTU::Engineering::Electrical and electronic engineering Temperature Sensor This paper describes the design of a high-accuracy smart temperature sensor in the 40 nm standard CMOS process. Due to process scaling, the high threshold voltages, large leakage currents and low intrinsic gains, etc., cause the realization of conventional high performance analog circuits to become very challenging in advanced processes. In the proposed design, some new techniques have been utilized in order to overcome the obstacles due to process scaling. The sensor’s frontend is based on substrate PNP transistors, couple with a two-step zooming ADC. This temperature sensor achieves a two-point calibrated inaccuracy of ± 0.5 ◦C and a one-point trimmed inaccuracy of± 0.8 ◦C over a range of temperature from−55 to 175 ◦C. It draws 20 µA from a 1.2 V power supply and occupies an area of 0.0578 mm2. Accepted version 2019-05-21T05:38:46Z 2019-12-06T16:11:34Z 2019-05-21T05:38:46Z 2019-12-06T16:11:34Z 2017 Journal Article Zhu, D., & Siek, L. (2018). A 0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦c. Circuits, Systems, and Signal Processing, 37(6), 2278-2298. doi:10.1007/s00034-017-0685-4 0278-081X https://hdl.handle.net/10356/85863 http://hdl.handle.net/10220/48291 10.1007/s00034-017-0685-4 en Circuits, Systems, and Signal Processing © 2017 Springer Science+Business Media US. All rights reserved.This is a post-peer-review, pre-copyedit version of an article published in Circuits, Systems, and Signal Processing. The final authenticated version is available online at: http://dx.doi.org/10.1007/s00034-017-0685-4. 21 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	40 nm Standard CMOS DRNTU::Engineering::Electrical and electronic engineering Temperature Sensor
spellingShingle	40 nm Standard CMOS DRNTU::Engineering::Electrical and electronic engineering Temperature Sensor Zhu, Di Siek, Liter A 0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦c
description	This paper describes the design of a high-accuracy smart temperature sensor in the 40 nm standard CMOS process. Due to process scaling, the high threshold voltages, large leakage currents and low intrinsic gains, etc., cause the realization of conventional high performance analog circuits to become very challenging in advanced processes. In the proposed design, some new techniques have been utilized in order to overcome the obstacles due to process scaling. The sensor’s frontend is based on substrate PNP transistors, couple with a two-step zooming ADC. This temperature sensor achieves a two-point calibrated inaccuracy of ± 0.5 ◦C and a one-point trimmed inaccuracy of± 0.8 ◦C over a range of temperature from−55 to 175 ◦C. It draws 20 µA from a 1.2 V power supply and occupies an area of 0.0578 mm2.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Zhu, Di Siek, Liter
format	Article
author	Zhu, Di Siek, Liter
author_sort	Zhu, Di
title	A 0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦c
title_short	A 0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦c
title_full	A 0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦c
title_fullStr	A 0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦c
title_full_unstemmed	A 0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦c
title_sort	0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦c
publishDate	2019
url	https://hdl.handle.net/10356/85863 http://hdl.handle.net/10220/48291
_version_	1681041976369086464

A 0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦c

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