A fully integrated Class-J GaN MMIC power amplifier for 5-GHz WLAN 802.11ax application
This letter presents a fully integrated Class-J GaN monolithic microwave circuit power amplifier (PA), which is fabricated in Woolfspeed 0.25-μm GaN-on-SiC technology. This PA is the first published design for the emerging IEEE 802.11ax application in the literature. When tested with 80-MHz 256-quad...
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Main Authors: | , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2019
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/104486 http://hdl.handle.net/10220/50015 |
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Institution: | Nanyang Technological University |
Language: | English |