A fully integrated Class-J GaN MMIC power amplifier for 5-GHz WLAN 802.11ax application

This letter presents a fully integrated Class-J GaN monolithic microwave circuit power amplifier (PA), which is fabricated in Woolfspeed 0.25-μm GaN-on-SiC technology. This PA is the first published design for the emerging IEEE 802.11ax application in the literature. When tested with 80-MHz 256-quad...

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Bibliographic Details
Main Authors: Liu, Bei, Mao, Mengda, Boon, Chirn Chye, Choi, Pilsoon, Khanna, Devrishi, Fitzgerald, Eugene A.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2019
Subjects:
Online Access:https://hdl.handle.net/10356/104486
http://hdl.handle.net/10220/50015
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Institution: Nanyang Technological University
Language: English
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