Low-threshold germanium laser for chip-scale LiDAR

In this paper, we present our recent result on germanium lasers on silicon that operate at a low threshold. We will introduce our innovative strain engineering platforms that can create direct bandgap germanium nanowires by inducing >5% elastic tensile strain. Then, we will present our first expe...

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Main Author: Nam, Donguk
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2020
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Online Access:https://hdl.handle.net/10356/145082
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1450822020-12-10T05:30:31Z Low-threshold germanium laser for chip-scale LiDAR Nam, Donguk School of Electrical and Electronic Engineering IEEE Electron Devices Technology and Manufacturing Conference (EDTM) Engineering::Electrical and electronic engineering Laser Strain Engineering In this paper, we present our recent result on germanium lasers on silicon that operate at a low threshold. We will introduce our innovative strain engineering platforms that can create direct bandgap germanium nanowires by inducing >5% elastic tensile strain. Then, we will present our first experimental observation of low-threshold optically pumped lasing in strained germanium nanowires. We will also discuss the possibility of our on-chip lasers for the ultimate realization of chip-scale LiDAR systems. Ministry of Education (MOE) National Research Foundation (NRF) Accepted version This work was supported by MOE under AcRF Tier 1 (RG 179/17) and Start-Up Grant (M4082093.040) from Nanyang Technological University (NTU) in Singapore. This work is also supported by National Research Foundation of Singapore through the Competitive Research Program (NRF2017NRFCRP001- 003). 2020-12-10T05:29:15Z 2020-12-10T05:29:15Z 2019 Conference Paper Nam, D. (2019). Low-threshold germanium laser for chip-scale LiDAR. Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 1-3. https://hdl.handle.net/10356/145082 1 3 en RG179/17 © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
Laser
Strain Engineering
spellingShingle Engineering::Electrical and electronic engineering
Laser
Strain Engineering
Nam, Donguk
Low-threshold germanium laser for chip-scale LiDAR
description In this paper, we present our recent result on germanium lasers on silicon that operate at a low threshold. We will introduce our innovative strain engineering platforms that can create direct bandgap germanium nanowires by inducing >5% elastic tensile strain. Then, we will present our first experimental observation of low-threshold optically pumped lasing in strained germanium nanowires. We will also discuss the possibility of our on-chip lasers for the ultimate realization of chip-scale LiDAR systems.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Nam, Donguk
format Conference or Workshop Item
author Nam, Donguk
author_sort Nam, Donguk
title Low-threshold germanium laser for chip-scale LiDAR
title_short Low-threshold germanium laser for chip-scale LiDAR
title_full Low-threshold germanium laser for chip-scale LiDAR
title_fullStr Low-threshold germanium laser for chip-scale LiDAR
title_full_unstemmed Low-threshold germanium laser for chip-scale LiDAR
title_sort low-threshold germanium laser for chip-scale lidar
publishDate 2020
url https://hdl.handle.net/10356/145082
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