One-dimensional hexagonal boron nitride conducting channel
Hexagonal boron nitride (hBN) is an insulating two-dimensional (2D) material with a large bandgap. Although known for its interfacing with other 2D materials and structural similarities to graphene, the potential use of hBN in 2D electronics is limited by its insulating nature. Here, we report atomi...
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sg-ntu-dr.10356-1454132020-12-21T05:50:54Z One-dimensional hexagonal boron nitride conducting channel Park, Hyo Ju Cha, Janghwan Choi, Min Kim, Jung Hwa Tay, Roland Yingjie Teo, Edwin Hang Tong Park, Noejung Hong, Suklyun Lee, Zonghoon School of Electrical and Electronic Engineering School of Materials Science and Engineering Temasek Laboratories @ NTU Engineering::Materials Boron Nitride Chemical Vapor Deposition Hexagonal boron nitride (hBN) is an insulating two-dimensional (2D) material with a large bandgap. Although known for its interfacing with other 2D materials and structural similarities to graphene, the potential use of hBN in 2D electronics is limited by its insulating nature. Here, we report atomically sharp twin boundaries at AA′/AB stacking boundaries in chemical vapor deposition–synthesized few-layer hBN. We find that the twin boundary is composed of a 6′6′ configuration, showing conducting feature with a zero bandgap. Furthermore, the formation mechanism of the atomically sharp twin boundaries is suggested by an analogy with stacking combinations of AA′/AB based on the observations of extended Klein edges at the layer boundaries of AB-stacked hBN. The atomically sharp AA′/AB stacking boundary is promising as an ultimate 1D electron channel embedded in insulating pristine hBN. This study will provide insights into the fabrication of single-hBN electronic devices. Ministry of Education (MOE) National Research Foundation (NRF) Published version This work was supported by IBS-R019-D1 and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) [nos. 2018R1A2A2A05019598, 2018K1A4A3A01064272 (GRDC Program), 2017R1A2B2010123, and 2019R1A2C2089332] and Priority Research Center Program (2010-0020207) through MOE-NRF. 2020-12-21T05:50:54Z 2020-12-21T05:50:54Z 2020 Journal Article Park, H. J., Cha, J., Choi, M., Kim, J. H., Tay, R. Y., Teo, E. H. T., . . . Lee, Z. (2020). One-dimensional hexagonal boron nitride conducting channel. Science Advances, 6(10), eaay4958-. doi:10.1126/sciadv.aay4958 2375-2548 https://hdl.handle.net/10356/145413 10.1126/sciadv.aay4958 32181347 10 6 en 2010-0020207 Science Advances © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). application/pdf |
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Engineering::Materials Boron Nitride Chemical Vapor Deposition Park, Hyo Ju Cha, Janghwan Choi, Min Kim, Jung Hwa Tay, Roland Yingjie Teo, Edwin Hang Tong Park, Noejung Hong, Suklyun Lee, Zonghoon One-dimensional hexagonal boron nitride conducting channel |
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Hexagonal boron nitride (hBN) is an insulating two-dimensional (2D) material with a large bandgap. Although known for its interfacing with other 2D materials and structural similarities to graphene, the potential use of hBN in 2D electronics is limited by its insulating nature. Here, we report atomically sharp twin boundaries at AA′/AB stacking boundaries in chemical vapor deposition–synthesized few-layer hBN. We find that the twin boundary is composed of a 6′6′ configuration, showing conducting feature with a zero bandgap. Furthermore, the formation mechanism of the atomically sharp twin boundaries is suggested by an analogy with stacking combinations of AA′/AB based on the observations of extended Klein edges at the layer boundaries of AB-stacked hBN. The atomically sharp AA′/AB stacking boundary is promising as an ultimate 1D electron channel embedded in insulating pristine hBN. This study will provide insights into the fabrication of single-hBN electronic devices. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Park, Hyo Ju Cha, Janghwan Choi, Min Kim, Jung Hwa Tay, Roland Yingjie Teo, Edwin Hang Tong Park, Noejung Hong, Suklyun Lee, Zonghoon |
format |
Article |
author |
Park, Hyo Ju Cha, Janghwan Choi, Min Kim, Jung Hwa Tay, Roland Yingjie Teo, Edwin Hang Tong Park, Noejung Hong, Suklyun Lee, Zonghoon |
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Park, Hyo Ju |
title |
One-dimensional hexagonal boron nitride conducting channel |
title_short |
One-dimensional hexagonal boron nitride conducting channel |
title_full |
One-dimensional hexagonal boron nitride conducting channel |
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One-dimensional hexagonal boron nitride conducting channel |
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One-dimensional hexagonal boron nitride conducting channel |
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one-dimensional hexagonal boron nitride conducting channel |
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2020 |
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https://hdl.handle.net/10356/145413 |
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