Low-power, large-area and high-performance CdSe quantum dots/reduced graphene oxide photodetectors

• Main Authors: Shih, Yi-Hsiang, Chen, You-Ling, Tan, Jui-Hsin, Chang, Sheng Hsiung, Uen, Wu-Yih, Chen, Shih-Lun, Lin, Ming-Yi, Chen, Yu-Cheng, Tu, Wei-Chen
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Electrical and electronic engineering; Large Area; Low Power
• Online Access: https://hdl.handle.net/10356/145674
• Institution: Nanyang Technological University

Graphene has unique and outstanding properties that make it a promising material for many applications. It has triggered considerable research in fields including solar cells, photodetectors, electrodes, and supercapacitors. Despite the favorable characteristics of devices using graphene have been widely explored, issues such as low absorbance, complex processing, and limited device size remain. Hence, we present large-area CdSe quantum dots (QDs)/reduced graphene oxide (rGO) films and corresponding photodetectors through a cost-effective and simple spin-coating method. As light turns on, CdSe QDs are excited and generate excess electron-hole pairs, leading to a significantly increased on/off current ratio of 2195 at a low bias voltage of -1 V, compared to that of photodetectors without CdSe QDs. Decorating the rGO film with CdSe QDs enables the wavefunction modulation and enhances the light harvesting. Our proposed high-performance photodetector can be operated at a low voltage, which is beneficial for applications in various green and low-power consumption devices.