Redox-based memristive devices : towards highly scalable synaptic electronics

• Main Author: Putu Andhita Dananjaya
• Other Authors: Lew Wen Siang
• Format: Thesis-Doctor of Philosophy
• Language: English
• Published: Nanyang Technological University 2021
• Subjects: Science::Physics
• Online Access: https://hdl.handle.net/10356/146143
• Institution: Nanyang Technological University

Complimentary Metal-Oxide Semiconductor (CMOS)-based systems have been the core elements of the semiconductor technology for decades. With the predicted CMOS scaling limit and the increasing amount of data in today’s technology, researchers around the world have started looking for emerging electronics to keep up with the hardware requirements and new radical computing paradigm, e.g., quantum and neuromorphic computing, to further lower the computational cost, especially in handling unstructured data set where the conventional von Neumann architecture struggles to strike a balance between power cost and space trade-off. Redox-based memristive devices emerge as one of the promising candidates to fulfil the hardware requirements of the emerging neuromorphic computing systems, e.g., as a synaptic device element. The highly scalable nature of the device along with its analog characteristic have been the focus of the research in the field. However, the inherent stochasticity, non-linearity, and symmetry of the device conductance switching behaviour hinder its progress in synaptic device applications. Fortunately, the synaptic device requirements are highly dependent on the target applications. Thus, systematic and thorough understanding upon the device physics involve during the switching operation is required to have full control on the performance at the system level and how to further improve it. This thesis focuses on the development of redox-based memristive devices governed by different underlying physical mechanisms, i.e., anion and cation-based system, to facilitate different device applications. The anion-based devices were operated under different mode of programming to investigate its potential application in different synaptic array architectures. The switching dynamics, under trap-controlled space-charge-limited mechanism, and its correlation with the linearity and symmetry of the device conductance response are extensively discussed. On the other hand, the cation-based devices were operated under volatile switching regime to investigate its unique switching dynamics for highly scalable select devices. The device temporal response to external voltage applied was used to understand the device switching behaviour under the theoretical framework of field-induced nucleation theory and Rayleigh instability.