Highly transparent ITO/HfO2/ITO device for visible-light sensing

Transparent visible-light sensors are of critical importance in invisible optoelectronic circuits as the interface between the optical and electrical domains. However, devices designed based on photocarrier generation for light sensing limit the transparency of the device in the visible region, as t...

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Main Authors: Kalaga, Pranav Sairam, Kumar, Dayanand, Ang, Diing Shenp, Tsakadze, Zviad
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2021
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Online Access:https://hdl.handle.net/10356/146959
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1469592021-03-15T09:01:14Z Highly transparent ITO/HfO2/ITO device for visible-light sensing Kalaga, Pranav Sairam Kumar, Dayanand Ang, Diing Shenp Tsakadze, Zviad School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Non-volatile Optical Memory Photosensor Transparent visible-light sensors are of critical importance in invisible optoelectronic circuits as the interface between the optical and electrical domains. However, devices designed based on photocarrier generation for light sensing limit the transparency of the device in the visible region, as the optically active layer also passively absorbs light continuously. In this work, we present an all-transparent ITO/HfO 2 /ITO device with the wide bandgap HfO 2 functioning as the resistive switching and the light sensing element. Electrically switching the resistive state of the device to a low-resistance soft-breakdown state is demonstrated to cause the wide-bandgap visible-light blind HfO 2 to become photoresponsive. This allows us to optically functionalize the device for an optical response by electrical breakdown in the oxide and can be triggered on-demand. Apart from the on-demand optical response in the device, the inherent resistive switching properties of the HfO 2 device allow for integration of memory and optical sensing capabilities, presenting a novel phenomenon for optical sensing in invisible optoelectronics. Ministry of Education (MOE) Published version This work was supported by The Singapore Ministry of Education under Grant MOE2016-T2-1-102 and Grant MOE2016-T2-2-102. 2021-03-15T09:01:14Z 2021-03-15T09:01:14Z 2020 Journal Article Kalaga, P. S., Kumar, D., Ang, D. S. & Tsakadze, Z. (2020). Highly transparent ITO/HfO2/ITO device for visible-light sensing. IEEE Access, 8, 91648-91652. https://dx.doi.org/10.1109/ACCESS.2020.2994383 2169-3536 https://hdl.handle.net/10356/146959 10.1109/ACCESS.2020.2994383 8 91648 91652 en MOE2016-T2-2-102 IEEE Access © 2020 IEEE. This journal is 100% open access, which means that all content is freely available without charge to users or their institutions. All articles accepted after 12 June 2019 are published under a CC BY 4.0 license, and the author retains copyright. Users are allowed to read, download, copy, distribute, print, search, or link to the full texts of the articles, or use them for any other lawful purpose, as long as proper attribution is given. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
Non-volatile Optical Memory
Photosensor
spellingShingle Engineering::Electrical and electronic engineering
Non-volatile Optical Memory
Photosensor
Kalaga, Pranav Sairam
Kumar, Dayanand
Ang, Diing Shenp
Tsakadze, Zviad
Highly transparent ITO/HfO2/ITO device for visible-light sensing
description Transparent visible-light sensors are of critical importance in invisible optoelectronic circuits as the interface between the optical and electrical domains. However, devices designed based on photocarrier generation for light sensing limit the transparency of the device in the visible region, as the optically active layer also passively absorbs light continuously. In this work, we present an all-transparent ITO/HfO 2 /ITO device with the wide bandgap HfO 2 functioning as the resistive switching and the light sensing element. Electrically switching the resistive state of the device to a low-resistance soft-breakdown state is demonstrated to cause the wide-bandgap visible-light blind HfO 2 to become photoresponsive. This allows us to optically functionalize the device for an optical response by electrical breakdown in the oxide and can be triggered on-demand. Apart from the on-demand optical response in the device, the inherent resistive switching properties of the HfO 2 device allow for integration of memory and optical sensing capabilities, presenting a novel phenomenon for optical sensing in invisible optoelectronics.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Kalaga, Pranav Sairam
Kumar, Dayanand
Ang, Diing Shenp
Tsakadze, Zviad
format Article
author Kalaga, Pranav Sairam
Kumar, Dayanand
Ang, Diing Shenp
Tsakadze, Zviad
author_sort Kalaga, Pranav Sairam
title Highly transparent ITO/HfO2/ITO device for visible-light sensing
title_short Highly transparent ITO/HfO2/ITO device for visible-light sensing
title_full Highly transparent ITO/HfO2/ITO device for visible-light sensing
title_fullStr Highly transparent ITO/HfO2/ITO device for visible-light sensing
title_full_unstemmed Highly transparent ITO/HfO2/ITO device for visible-light sensing
title_sort highly transparent ito/hfo2/ito device for visible-light sensing
publishDate 2021
url https://hdl.handle.net/10356/146959
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