Diffusive and drift halide perovskite memristive barristors as nociceptive and synaptic emulators for neuromorphic computing

With the current research impetus on neuromorphic computing hardware, realizing efficient drift and diffusive memristors are considered critical milestones for the implementation of readout layers, selectors, and frameworks in deep learning and reservoir computing networks. Current demonstrations ar...

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Main Authors: John, Rohit Abraham, Yantara, Natalia, Ng, Si En, Muhammad Iszaki Bin Patdillah, Kulkarni, Mohit Rameshchandra, Nur Fadilah Jamaludin, Basu, Joydeep, Ankit, Mhaisalkar, Subodh Gautam, Basu, Arindam, Mathews, Nripan
Other Authors: School of Materials Science and Engineering
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Language:English
Published: 2021
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Online Access:https://hdl.handle.net/10356/147040
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spelling sg-ntu-dr.10356-1470402021-04-24T20:11:28Z Diffusive and drift halide perovskite memristive barristors as nociceptive and synaptic emulators for neuromorphic computing John, Rohit Abraham Yantara, Natalia Ng, Si En Muhammad Iszaki Bin Patdillah Kulkarni, Mohit Rameshchandra Nur Fadilah Jamaludin Basu, Joydeep Ankit Mhaisalkar, Subodh Gautam Basu, Arindam Mathews, Nripan School of Materials Science and Engineering School of Electrical and Electronic Engineering Energy Research Institute @ NTU (ERI@N) Engineering::Materials Artificial Synapses Neuromorphic With the current research impetus on neuromorphic computing hardware, realizing efficient drift and diffusive memristors are considered critical milestones for the implementation of readout layers, selectors, and frameworks in deep learning and reservoir computing networks. Current demonstrations are predominantly limited to oxide insulators with a soft breakdown behavior. While organic ionotronic electrochemical materials offer an attractive alternative, their implementations thus far have been limited to features exploiting ionic drift a.k.a. drift memristor technology. Development of diffusive memristors with organic electrochemical materials is still at an early stage, and modulation of their switching dynamics remains unexplored. Here, halide perovskite (HP) memristive barristors (diodes with variable Schottky barriers) portraying tunable diffusive dynamics and ionic drift are proposed and experimentally demonstrated. An ion permissive poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate interface that promotes diffusive kinetics and an ion source nickel oxide (NiOx) interface that supports drift kinetics are identified to design diffusive and drift memristors, respectively, with methylammonuim lead bromide (CH3NH3PbBr3) as the switching matrix. In line with the recent interest on developing artificial afferent nerves as information channels bridging sensors and artificial neural networks, these HP memristive barristors are fashioned as nociceptive and synaptic emulators for neuromorphic sensory signal computing. Ministry of Education (MOE) National Research Foundation (NRF) Accepted version NRF‐CRP14‐2014‐03 NRF2018‐ITC001‐001 MOE2016‐T2‐1‐100 MOE2018‐T2‐2‐083 2021-04-20T07:50:00Z 2021-04-20T07:50:00Z 2021 Journal Article John, R. A., Yantara, N., Ng, S. E., Muhammad Iszaki Bin Patdillah, Kulkarni, M. R., Nur Fadilah Jamaludin, Basu, J., Ankit, Mhaisalkar, S. G., Basu, A. & Mathews, N. (2021). Diffusive and drift halide perovskite memristive barristors as nociceptive and synaptic emulators for neuromorphic computing. Advanced Materials, 33(15), 2007851-. https://dx.doi.org/10.1002/adma.202007851 0935-9648 https://hdl.handle.net/10356/147040 10.1002/adma.202007851 15 33 2007851 en NRF‐CRP14‐2014‐03 NRF2018-ITC001-001 MOE2016‐T2‐1‐100 MOE2018‐T2‐2‐083 Advanced Materials This is the peer reviewed version of the following article: John, R. A., Yantara, N., Ng, S. E., Muhammad Iszaki Bin Patdillah, Kulkarni, M. R., Nur Fadilah Jamaludin, Basu, J., Ankit, Mhaisalkar, S. G., Basu, A. & Mathews, N. (2021). Diffusive and drift halide perovskite memristive barristors as nociceptive and synaptic emulators for neuromorphic computing. Advanced Materials, 33(15), 2007851-. https://dx.doi.org/10.1002/adma.202007851, which has been published in final form at https://doi.org/10.1002/adma.202007851. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Materials
Artificial Synapses
Neuromorphic
spellingShingle Engineering::Materials
Artificial Synapses
Neuromorphic
John, Rohit Abraham
Yantara, Natalia
Ng, Si En
Muhammad Iszaki Bin Patdillah
Kulkarni, Mohit Rameshchandra
Nur Fadilah Jamaludin
Basu, Joydeep
Ankit
Mhaisalkar, Subodh Gautam
Basu, Arindam
Mathews, Nripan
Diffusive and drift halide perovskite memristive barristors as nociceptive and synaptic emulators for neuromorphic computing
description With the current research impetus on neuromorphic computing hardware, realizing efficient drift and diffusive memristors are considered critical milestones for the implementation of readout layers, selectors, and frameworks in deep learning and reservoir computing networks. Current demonstrations are predominantly limited to oxide insulators with a soft breakdown behavior. While organic ionotronic electrochemical materials offer an attractive alternative, their implementations thus far have been limited to features exploiting ionic drift a.k.a. drift memristor technology. Development of diffusive memristors with organic electrochemical materials is still at an early stage, and modulation of their switching dynamics remains unexplored. Here, halide perovskite (HP) memristive barristors (diodes with variable Schottky barriers) portraying tunable diffusive dynamics and ionic drift are proposed and experimentally demonstrated. An ion permissive poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate interface that promotes diffusive kinetics and an ion source nickel oxide (NiOx) interface that supports drift kinetics are identified to design diffusive and drift memristors, respectively, with methylammonuim lead bromide (CH3NH3PbBr3) as the switching matrix. In line with the recent interest on developing artificial afferent nerves as information channels bridging sensors and artificial neural networks, these HP memristive barristors are fashioned as nociceptive and synaptic emulators for neuromorphic sensory signal computing.
author2 School of Materials Science and Engineering
author_facet School of Materials Science and Engineering
John, Rohit Abraham
Yantara, Natalia
Ng, Si En
Muhammad Iszaki Bin Patdillah
Kulkarni, Mohit Rameshchandra
Nur Fadilah Jamaludin
Basu, Joydeep
Ankit
Mhaisalkar, Subodh Gautam
Basu, Arindam
Mathews, Nripan
format Article
author John, Rohit Abraham
Yantara, Natalia
Ng, Si En
Muhammad Iszaki Bin Patdillah
Kulkarni, Mohit Rameshchandra
Nur Fadilah Jamaludin
Basu, Joydeep
Ankit
Mhaisalkar, Subodh Gautam
Basu, Arindam
Mathews, Nripan
author_sort John, Rohit Abraham
title Diffusive and drift halide perovskite memristive barristors as nociceptive and synaptic emulators for neuromorphic computing
title_short Diffusive and drift halide perovskite memristive barristors as nociceptive and synaptic emulators for neuromorphic computing
title_full Diffusive and drift halide perovskite memristive barristors as nociceptive and synaptic emulators for neuromorphic computing
title_fullStr Diffusive and drift halide perovskite memristive barristors as nociceptive and synaptic emulators for neuromorphic computing
title_full_unstemmed Diffusive and drift halide perovskite memristive barristors as nociceptive and synaptic emulators for neuromorphic computing
title_sort diffusive and drift halide perovskite memristive barristors as nociceptive and synaptic emulators for neuromorphic computing
publishDate 2021
url https://hdl.handle.net/10356/147040
_version_ 1698713682525028352