Steep-slope tunnel field-effect transistor based on the two-dimensional WSe2 and ReS2

• Main Author: Koh, Hui Hui
• Other Authors: Liu Zheng
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2021
• Subjects: Engineering::Materials
• Online Access: https://hdl.handle.net/10356/148316
• Institution: Nanyang Technological University

Two-dimensional (2D) materials have drawn an immense attention in the research field and are well-known for their outstanding physical, mechanical and optical properties. The usage of these 2D materials are especially ideal in the advancement of the electronic devices in the next generation as they provide enhanced properties and detection limits such as in the use of the field-effect transistors and integrated circuits. With the appropriate fabrication, 2D field-effect transistors (FETs) are able to overcome the limitions posed by 3D FETs. In this report, the 2D p-type WSe2 and n-type ReS2 are used to achieve the steep-slope tunnel field-effect transistor which involves delicate and meticulous procedure in transferring ReS2 onto WSe2¬. For the demonstrated WSe2/ReS2 based TFET device, sub-60 mV/dec subthreshold slope has been achieved, whose minimum value reaches as low as 18 mV/dec, showing the potential in the future energy-efficient logic circuit applications.