Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices

We demonstrate low-loss hydrogenated amorphous silicon (a-Si:H) waveguides by hot-wire chemical vapor deposition (HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained an optical quality a-Si:H waveguide...

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Main Authors:	Oo, Swe Z., Tarazona, Antulio, Khokhar, Ali Z., Petra, Rafidah, Franz, Yohann, Mashanovich, Goran Z., Reed, Graham T., Peacock, Anna C., Chong, Harold M. H.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2021
Subjects:	Engineering::Electrical and electronic engineering Microcrystalline Silicon Films
Online Access:	https://hdl.handle.net/10356/148729
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-148729
record_format	dspace
spelling	sg-ntu-dr.10356-1487292021-05-05T07:41:33Z Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices Oo, Swe Z. Tarazona, Antulio Khokhar, Ali Z. Petra, Rafidah Franz, Yohann Mashanovich, Goran Z. Reed, Graham T. Peacock, Anna C. Chong, Harold M. H. School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Microcrystalline Silicon Films We demonstrate low-loss hydrogenated amorphous silicon (a-Si:H) waveguides by hot-wire chemical vapor deposition (HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained an optical quality a-Si:H waveguide deposited at 230°C that has a strong Raman peak shift at 480 cm , peak width (full width at half-maximum) of 68.9 cm , and bond angle deviation of 8.98°. Optical transmission measurement shows a low propagation loss of 0.8 dB/cm at the 1550 nm wavelength, which is the first, to our knowledge, report for a HWCVD a-Si:H waveguide. Published version Engineering and Physical Sciences Research Council (EPSRC) (EP/L00044X/1, EP/N013247/1, EP/ L02112G/1). 2021-05-05T07:41:32Z 2021-05-05T07:41:32Z 2019 Journal Article Oo, S. Z., Tarazona, A., Khokhar, A. Z., Petra, R., Franz, Y., Mashanovich, G. Z., Reed, G. T., Peacock, A. C. & Chong, H. M. H. (2019). Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices. Photonics Research, 7(2), 193-200. https://dx.doi.org/10.1364/PRJ.7.000193 2327-9125 https://hdl.handle.net/10356/148729 10.1364/PRJ.7.000193 2-s2.0-85063939824 2 7 193 200 en Photonics Research © 2019 Chinese Laser Press. Published by Chinese Laser Press under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	Engineering::Electrical and electronic engineering Microcrystalline Silicon Films
spellingShingle	Engineering::Electrical and electronic engineering Microcrystalline Silicon Films Oo, Swe Z. Tarazona, Antulio Khokhar, Ali Z. Petra, Rafidah Franz, Yohann Mashanovich, Goran Z. Reed, Graham T. Peacock, Anna C. Chong, Harold M. H. Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices
description	We demonstrate low-loss hydrogenated amorphous silicon (a-Si:H) waveguides by hot-wire chemical vapor deposition (HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained an optical quality a-Si:H waveguide deposited at 230°C that has a strong Raman peak shift at 480 cm , peak width (full width at half-maximum) of 68.9 cm , and bond angle deviation of 8.98°. Optical transmission measurement shows a low propagation loss of 0.8 dB/cm at the 1550 nm wavelength, which is the first, to our knowledge, report for a HWCVD a-Si:H waveguide.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Oo, Swe Z. Tarazona, Antulio Khokhar, Ali Z. Petra, Rafidah Franz, Yohann Mashanovich, Goran Z. Reed, Graham T. Peacock, Anna C. Chong, Harold M. H.
format	Article
author	Oo, Swe Z. Tarazona, Antulio Khokhar, Ali Z. Petra, Rafidah Franz, Yohann Mashanovich, Goran Z. Reed, Graham T. Peacock, Anna C. Chong, Harold M. H.
author_sort	Oo, Swe Z.
title	Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices
title_short	Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices
title_full	Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices
title_fullStr	Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices
title_full_unstemmed	Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices
title_sort	hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices
publishDate	2021
url	https://hdl.handle.net/10356/148729
_version_	1699245899027316736

Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices

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