Tailoring magnetic order via atomically stacking 3d/5d electrons to achieve high-performance spintronic devices

• Main Authors: Huang, Ke, Wu, Liang, Wang, Maoyu, Swain, Nyayabanta, Motapothula, M., Luo, Yongzheng, Han, Kun, Chen, Mingfeng, Ye, Chen, Yang, Allen Jian, Xu, Huan, Qi, Dong-chen, N'Diaye, Alpha T., Panagopoulos, Christos, Primetzhofer, Daniel, Shen, Lei, Sengupta, Pinaki, Ma, Jing, Feng, Zhenxing, Nan, Ce-Wen, Wang, Renshaw Xiao
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2021
• Subjects: Science::Physics; Calculations; Electrons
• Online Access: https://hdl.handle.net/10356/148735
• Institution: Nanyang Technological University

The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tail...