Design of a GaN-based power converter

With the rapid development of gallium nitride (GaN) based system technology, it is now possible to design inverters with better performance than Si-based inverters. GaN-based switching systems are widely accepted to outperform their Si-based counterparts in many respects, including lower power consu...

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Bibliographic Details
Main Author: Pek, Jonas
Other Authors: Josep Pou
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2021
Subjects:
Online Access:https://hdl.handle.net/10356/150126
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Institution: Nanyang Technological University
Language: English
Description
Summary:With the rapid development of gallium nitride (GaN) based system technology, it is now possible to design inverters with better performance than Si-based inverters. GaN-based switching systems are widely accepted to outperform their Si-based counterparts in many respects, including lower power consumption and higher switching speeds. Many applications, including hybrid and plug-in electric cars, solar power inverters, automotive motor drives, and aerospace, would benefit from GaN systems. Researchers are yet to thoroughly investigate the advantages of GaN devices in inverter design, so the aim of this paper is to assess the high-efficiency capabilities of inverters that can be accomplished using these new devices, as well as the thermal benefits that arise.