Two-step chemical vapor deposition synthesis of NiTe2-MoS2 vertical junctions with improved MoS2 transistor performance

• Main Authors: Guo, Yuxi, Kang, Lixing, Zeng, Qingsheng, Xu, Manzhang, Li, Lei, Wu, Yao, Yang, Jiefu, Zhang, Yanni, Qi, Xiaofei, Zhao, Wu, Zhang, Zhiyong, Liu, Zheng
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Materials; Chemical Vapor Deposition; 2D Materials
• Online Access: https://hdl.handle.net/10356/150892
• Institution: Nanyang Technological University

The primary challenge for the widespread applications of two-dimensional (2D) electronics is to achieve satisfactory electrical contacts because, during traditional metal integration process, difficulties arise due to inevitable physical damages and selectively doping. The two-dimensional metal-semiconductor junctions have attracted captivated attention for the potential applications to achieve reliable electrical contacts in future atomically thin electronics. Here we demonstrate the van der Waals epitaxial growth of 2D NiTe2-MoS2 metal-semiconductor vertical junctions which the upper NiTe2 selectively nucleates at the edge of underlying MoS2. Optical microscopy (OM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and scanning transmission electron microscope (STEM) studies confirm that NiTe2-MoS2 metal-semiconductor vertical junctions are successfully synthesized. Electrical properties of the NiTe2-contacted MoS2 field-effect transistors (FETs) show higher field-effect mobilities (μFE) than those with deposited Cr/Au contacts. This study demonstrates an effective pathway to improved MoS2 transistors performance with metal-semiconductor junctions.