Electric field control for energy efficient domain wall injection

Domain wall injection by electric means is an energy exhausting process. This process is conventionally carried out by sending a current pulse through a stripline which generates an Oersted field to locally switch the magnetization in a magnetic wire. In this work, the magnetic properties of the dev...

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Main Authors: Tan, Funan, Wong, Qi Ying, Gan, Weiliang, Li, Sihua, Liu, Hong Xi, Poh, Francis, Lew, Wen Siang
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2021
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Online Access:https://hdl.handle.net/10356/151088
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1510882021-06-22T01:33:33Z Electric field control for energy efficient domain wall injection Tan, Funan Wong, Qi Ying Gan, Weiliang Li, Sihua Liu, Hong Xi Poh, Francis Lew, Wen Siang School of Physical and Mathematical Sciences GLOBALFOUNDRIES Singapore Pte. Ltd. Science::Physics Domain Wall Injection Electric Field Domain wall injection by electric means is an energy exhausting process. This process is conventionally carried out by sending a current pulse through a stripline which generates an Oersted field to locally switch the magnetization in a magnetic wire. In this work, the magnetic properties of the device were modulated by electric control to lower the required current density for DW injection. The proposed DW injection device employs a Hall cross structure which simplifies the device fabrication process and allows a larger Oersted field to be generated at the domain wall injection region. Electrical pulses of 50 ns were sent through the Hall bar to inject domain walls. The formation of the resulting domain walls was detected electrically using the Hall resistance and optically by Kerr microscopy. The results show that the required current density for injection of domain walls is reduced by ∼20% with an applied electric field of +250 MV/m on the Hall cross structure. Agency for Science, Technology and Research (A*STAR) National Research Foundation (NRF) The work was supported by the Singapore National Research Foundation, Prime Minister’s Office under a Competitive Research Programme (Non-volatile Magnetic Logic and Memory Integrated Circuit Devices, NRF-CRP9-2011-01), and an Industry-IHL Partnership Program (NRF2015-IIP001-001). The supports from a RIE2020 ASTAR AME IAF-ICP Grant (No. I1801E0030) and an ASTAR AME Programmatic Grant (No. A1687b0033) is also acknowledged. WSL is a member of the Singapore Spintronics Consortium (SG-SPIN). 2021-06-22T01:33:32Z 2021-06-22T01:33:32Z 2019 Journal Article Tan, F., Wong, Q. Y., Gan, W., Li, S., Liu, H. X., Poh, F. & Lew, W. S. (2019). Electric field control for energy efficient domain wall injection. Journal of Magnetism and Magnetic Materials, 485, 174-179. https://dx.doi.org/10.1016/j.jmmm.2019.04.069 0304-8853 https://hdl.handle.net/10356/151088 10.1016/j.jmmm.2019.04.069 2-s2.0-85064883487 485 174 179 en NRF-CRP9-2011-01 NRF2015-IIP001-001 No. I1801E0030 No. A1687b0033 Journal of Magnetism and Magnetic Materials © 2019 Elsevier B.V. All rights reserved.
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Science::Physics
Domain Wall Injection
Electric Field
spellingShingle Science::Physics
Domain Wall Injection
Electric Field
Tan, Funan
Wong, Qi Ying
Gan, Weiliang
Li, Sihua
Liu, Hong Xi
Poh, Francis
Lew, Wen Siang
Electric field control for energy efficient domain wall injection
description Domain wall injection by electric means is an energy exhausting process. This process is conventionally carried out by sending a current pulse through a stripline which generates an Oersted field to locally switch the magnetization in a magnetic wire. In this work, the magnetic properties of the device were modulated by electric control to lower the required current density for DW injection. The proposed DW injection device employs a Hall cross structure which simplifies the device fabrication process and allows a larger Oersted field to be generated at the domain wall injection region. Electrical pulses of 50 ns were sent through the Hall bar to inject domain walls. The formation of the resulting domain walls was detected electrically using the Hall resistance and optically by Kerr microscopy. The results show that the required current density for injection of domain walls is reduced by ∼20% with an applied electric field of +250 MV/m on the Hall cross structure.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Tan, Funan
Wong, Qi Ying
Gan, Weiliang
Li, Sihua
Liu, Hong Xi
Poh, Francis
Lew, Wen Siang
format Article
author Tan, Funan
Wong, Qi Ying
Gan, Weiliang
Li, Sihua
Liu, Hong Xi
Poh, Francis
Lew, Wen Siang
author_sort Tan, Funan
title Electric field control for energy efficient domain wall injection
title_short Electric field control for energy efficient domain wall injection
title_full Electric field control for energy efficient domain wall injection
title_fullStr Electric field control for energy efficient domain wall injection
title_full_unstemmed Electric field control for energy efficient domain wall injection
title_sort electric field control for energy efficient domain wall injection
publishDate 2021
url https://hdl.handle.net/10356/151088
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