Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe)
Layered AᴵᴵᴵBᵛᴵ chalcogenides represent an interesting class semiconductors, where most of adopting 2D structures. Unlike the typical sandwiched structure of transition metal dichalcogenides (TMDs), layered AᴵᴵᴵBᵛᴵ chalcogenides like InSe and GaSe are composed of X−M−M−X motif where M is gallium/ind...
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sg-ntu-dr.10356-1511602021-07-28T14:56:22Z Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe) Wang, Yong Szökölová, Katerina Muhammad Zafir Mohamad Nasir Sofer, Zdenek Pumera, Martin School of Physical and Mathematical Sciences Science::Chemistry Indium Monochalcogenides Layered Materials Layered AᴵᴵᴵBᵛᴵ chalcogenides represent an interesting class semiconductors, where most of adopting 2D structures. Unlike the typical sandwiched structure of transition metal dichalcogenides (TMDs), layered AᴵᴵᴵBᵛᴵ chalcogenides like InSe and GaSe are composed of X−M−M−X motif where M is gallium/indium and X is sulfur/selenium/tellurium. The exception is InS, which adopt an orthorhombic 3D structure. Herein, we studied and compared the inherent electrochemical properties as well as the electrocatalytic performances towards hydrogen evolution (HER), oxygen evolution (OER) and oxygen reduction reaction (ORR) of indium monochalcogenides (InS, InSe and InTe). Inherent electrochemistry studies in phosphate buffered saline electrolyte showed that InS did not exhibit any inherent electrochemical signals when compared to bare glassy carbon electrode. However, InSe showed a reduction peak at −1.6 V while InTe had an oxidation peak at 0.2 V. The heterogeneous electron transfer (HET) rates of indium monochalcogenides were measured with [Fe(CN)₆]³⁻⁄ ⁴⁻ redox probe using cyclic voltammetry (vs. Ag/AgCl) at the scan rate of 100 mV s⁻¹. It was found that InTe exhibited the best electrochemical performance with the fastest HET rate with highest k 0 obs obtained (3.7×10⁻³cm s⁻¹). InS showed the best electrocatalytic performance for HER with the lowest overpotential value of 0.92 V at current density of −10 mA cm⁻². However, the performances of indium monochalcogenides were almost comparable to that of bare glassy carbon electrode and do not exhibit any improvements in electrocatalytic capabilities. This study provides insights into the electrochemical properties and electrocatalytic performances of layered AᴵᴵᴵBᵛᴵ indium monochalcogenides which would influence potential applications. M.P. acknowledges the financial support of Grant Agency of the Czech Republic (EXPRO: 19-26896X). K.S. was supported by Specific University Research (MSMT No. 20-SVV/2019). Z.S. was supported by Neuron Foundation for scientific support. 2021-07-28T14:56:22Z 2021-07-28T14:56:22Z 2019 Journal Article Wang, Y., Szökölová, K., Muhammad Zafir Mohamad Nasir, Sofer, Z. & Pumera, M. (2019). Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe). ChemCatChem, 11(11), 2634-2642. https://dx.doi.org/10.1002/cctc.201900449 1867-3880 0000-0001-5846-2951 https://hdl.handle.net/10356/151160 10.1002/cctc.201900449 2-s2.0-85065291103 11 11 2634 2642 en ChemCatChem © 2019 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved. |
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Science::Chemistry Indium Monochalcogenides Layered Materials Wang, Yong Szökölová, Katerina Muhammad Zafir Mohamad Nasir Sofer, Zdenek Pumera, Martin Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe) |
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Layered AᴵᴵᴵBᵛᴵ chalcogenides represent an interesting class semiconductors, where most of adopting 2D structures. Unlike the typical sandwiched structure of transition metal dichalcogenides (TMDs), layered AᴵᴵᴵBᵛᴵ chalcogenides like InSe and GaSe are composed of X−M−M−X motif where M is gallium/indium and X is sulfur/selenium/tellurium. The exception is InS, which adopt an orthorhombic 3D structure. Herein, we studied and compared the inherent electrochemical properties as well as the electrocatalytic performances towards hydrogen evolution (HER), oxygen evolution (OER) and oxygen reduction reaction (ORR) of indium monochalcogenides (InS, InSe and InTe). Inherent electrochemistry studies in phosphate buffered saline electrolyte showed that InS did not exhibit any inherent electrochemical signals when compared to bare glassy carbon electrode. However, InSe showed a reduction peak at −1.6 V while InTe had an oxidation peak at 0.2 V. The heterogeneous electron transfer (HET) rates of indium monochalcogenides were measured with [Fe(CN)₆]³⁻⁄ ⁴⁻ redox probe using cyclic voltammetry (vs. Ag/AgCl) at the scan rate of 100 mV s⁻¹. It was found that InTe exhibited the best electrochemical performance with the fastest HET rate with highest k 0 obs obtained (3.7×10⁻³cm s⁻¹). InS showed the best electrocatalytic performance for HER with the lowest overpotential value of 0.92 V at current density of −10 mA cm⁻². However, the performances of indium monochalcogenides were almost comparable to that of bare glassy carbon electrode and do not exhibit any improvements in electrocatalytic capabilities. This study provides insights into the electrochemical properties and electrocatalytic performances of layered AᴵᴵᴵBᵛᴵ indium monochalcogenides which would influence potential applications. |
author2 |
School of Physical and Mathematical Sciences |
author_facet |
School of Physical and Mathematical Sciences Wang, Yong Szökölová, Katerina Muhammad Zafir Mohamad Nasir Sofer, Zdenek Pumera, Martin |
format |
Article |
author |
Wang, Yong Szökölová, Katerina Muhammad Zafir Mohamad Nasir Sofer, Zdenek Pumera, Martin |
author_sort |
Wang, Yong |
title |
Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe) |
title_short |
Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe) |
title_full |
Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe) |
title_fullStr |
Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe) |
title_full_unstemmed |
Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe) |
title_sort |
electrochemistry of layered semiconducting aᴵᴵᴵbᵛᴵ chalcogenides : indium monochalcogenides (ins, inse, inte) |
publishDate |
2021 |
url |
https://hdl.handle.net/10356/151160 |
_version_ |
1707050425021104128 |