Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe)

Layered AᴵᴵᴵBᵛᴵ chalcogenides represent an interesting class semiconductors, where most of adopting 2D structures. Unlike the typical sandwiched structure of transition metal dichalcogenides (TMDs), layered AᴵᴵᴵBᵛᴵ chalcogenides like InSe and GaSe are composed of X−M−M−X motif where M is gallium/ind...

Full description

Saved in:
Bibliographic Details
Main Authors: Wang, Yong, Szökölová, Katerina, Muhammad Zafir Mohamad Nasir, Sofer, Zdenek, Pumera, Martin
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2021
Subjects:
Online Access:https://hdl.handle.net/10356/151160
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-151160
record_format dspace
spelling sg-ntu-dr.10356-1511602021-07-28T14:56:22Z Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe) Wang, Yong Szökölová, Katerina Muhammad Zafir Mohamad Nasir Sofer, Zdenek Pumera, Martin School of Physical and Mathematical Sciences Science::Chemistry Indium Monochalcogenides Layered Materials Layered AᴵᴵᴵBᵛᴵ chalcogenides represent an interesting class semiconductors, where most of adopting 2D structures. Unlike the typical sandwiched structure of transition metal dichalcogenides (TMDs), layered AᴵᴵᴵBᵛᴵ chalcogenides like InSe and GaSe are composed of X−M−M−X motif where M is gallium/indium and X is sulfur/selenium/tellurium. The exception is InS, which adopt an orthorhombic 3D structure. Herein, we studied and compared the inherent electrochemical properties as well as the electrocatalytic performances towards hydrogen evolution (HER), oxygen evolution (OER) and oxygen reduction reaction (ORR) of indium monochalcogenides (InS, InSe and InTe). Inherent electrochemistry studies in phosphate buffered saline electrolyte showed that InS did not exhibit any inherent electrochemical signals when compared to bare glassy carbon electrode. However, InSe showed a reduction peak at −1.6 V while InTe had an oxidation peak at 0.2 V. The heterogeneous electron transfer (HET) rates of indium monochalcogenides were measured with [Fe(CN)₆]³⁻⁄ ⁴⁻ redox probe using cyclic voltammetry (vs. Ag/AgCl) at the scan rate of 100 mV s⁻¹. It was found that InTe exhibited the best electrochemical performance with the fastest HET rate with highest k 0 obs obtained (3.7×10⁻³cm s⁻¹). InS showed the best electrocatalytic performance for HER with the lowest overpotential value of 0.92 V at current density of −10 mA cm⁻². However, the performances of indium monochalcogenides were almost comparable to that of bare glassy carbon electrode and do not exhibit any improvements in electrocatalytic capabilities. This study provides insights into the electrochemical properties and electrocatalytic performances of layered AᴵᴵᴵBᵛᴵ indium monochalcogenides which would influence potential applications. M.P. acknowledges the financial support of Grant Agency of the Czech Republic (EXPRO: 19-26896X). K.S. was supported by Specific University Research (MSMT No. 20-SVV/2019). Z.S. was supported by Neuron Foundation for scientific support. 2021-07-28T14:56:22Z 2021-07-28T14:56:22Z 2019 Journal Article Wang, Y., Szökölová, K., Muhammad Zafir Mohamad Nasir, Sofer, Z. & Pumera, M. (2019). Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe). ChemCatChem, 11(11), 2634-2642. https://dx.doi.org/10.1002/cctc.201900449 1867-3880 0000-0001-5846-2951 https://hdl.handle.net/10356/151160 10.1002/cctc.201900449 2-s2.0-85065291103 11 11 2634 2642 en ChemCatChem © 2019 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved.
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Science::Chemistry
Indium Monochalcogenides
Layered Materials
spellingShingle Science::Chemistry
Indium Monochalcogenides
Layered Materials
Wang, Yong
Szökölová, Katerina
Muhammad Zafir Mohamad Nasir
Sofer, Zdenek
Pumera, Martin
Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe)
description Layered AᴵᴵᴵBᵛᴵ chalcogenides represent an interesting class semiconductors, where most of adopting 2D structures. Unlike the typical sandwiched structure of transition metal dichalcogenides (TMDs), layered AᴵᴵᴵBᵛᴵ chalcogenides like InSe and GaSe are composed of X−M−M−X motif where M is gallium/indium and X is sulfur/selenium/tellurium. The exception is InS, which adopt an orthorhombic 3D structure. Herein, we studied and compared the inherent electrochemical properties as well as the electrocatalytic performances towards hydrogen evolution (HER), oxygen evolution (OER) and oxygen reduction reaction (ORR) of indium monochalcogenides (InS, InSe and InTe). Inherent electrochemistry studies in phosphate buffered saline electrolyte showed that InS did not exhibit any inherent electrochemical signals when compared to bare glassy carbon electrode. However, InSe showed a reduction peak at −1.6 V while InTe had an oxidation peak at 0.2 V. The heterogeneous electron transfer (HET) rates of indium monochalcogenides were measured with [Fe(CN)₆]³⁻⁄ ⁴⁻ redox probe using cyclic voltammetry (vs. Ag/AgCl) at the scan rate of 100 mV s⁻¹. It was found that InTe exhibited the best electrochemical performance with the fastest HET rate with highest k 0 obs obtained (3.7×10⁻³cm s⁻¹). InS showed the best electrocatalytic performance for HER with the lowest overpotential value of 0.92 V at current density of −10 mA cm⁻². However, the performances of indium monochalcogenides were almost comparable to that of bare glassy carbon electrode and do not exhibit any improvements in electrocatalytic capabilities. This study provides insights into the electrochemical properties and electrocatalytic performances of layered AᴵᴵᴵBᵛᴵ indium monochalcogenides which would influence potential applications.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Wang, Yong
Szökölová, Katerina
Muhammad Zafir Mohamad Nasir
Sofer, Zdenek
Pumera, Martin
format Article
author Wang, Yong
Szökölová, Katerina
Muhammad Zafir Mohamad Nasir
Sofer, Zdenek
Pumera, Martin
author_sort Wang, Yong
title Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe)
title_short Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe)
title_full Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe)
title_fullStr Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe)
title_full_unstemmed Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe)
title_sort electrochemistry of layered semiconducting aᴵᴵᴵbᵛᴵ chalcogenides : indium monochalcogenides (ins, inse, inte)
publishDate 2021
url https://hdl.handle.net/10356/151160
_version_ 1707050425021104128