Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe)

• المؤلفون الرئيسيون: Wang, Yong, Szökölová, Katerina, Muhammad Zafir Mohamad Nasir, Sofer, Zdenek, Pumera, Martin
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Science::Chemistry; Indium Monochalcogenides; Layered Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/151160

Layered AᴵᴵᴵBᵛᴵ chalcogenides represent an interesting class semiconductors, where most of adopting 2D structures. Unlike the typical sandwiched structure of transition metal dichalcogenides (TMDs), layered AᴵᴵᴵBᵛᴵ chalcogenides like InSe and GaSe are composed of X−M−M−X motif where M is gallium/ind...