Electrochemistry of layered semiconducting AᴵᴵᴵBᵛᴵ chalcogenides : indium monochalcogenides (InS, InSe, InTe)

• Main Authors: Wang, Yong, Szökölová, Katerina, Muhammad Zafir Mohamad Nasir, Sofer, Zdenek, Pumera, Martin
• 其他作者: School of Physical and Mathematical Sciences
• 格式: Article
• 語言: English
• 出版: 2021
• 主題: Science::Chemistry; Indium Monochalcogenides; Layered Materials
• 在線閱讀: https://hdl.handle.net/10356/151160
• 機構: Nanyang Technological University

Layered AᴵᴵᴵBᵛᴵ chalcogenides represent an interesting class semiconductors, where most of adopting 2D structures. Unlike the typical sandwiched structure of transition metal dichalcogenides (TMDs), layered AᴵᴵᴵBᵛᴵ chalcogenides like InSe and GaSe are composed of X−M−M−X motif where M is gallium/ind...