Electronic configuration in outset orbitals of doping elements plays as a key factor in tuning near infrared reflection of YMn0.9M0.1O3 (M ¼ Cr, Mn, Fe, Co, Al, Ga and In)

• Main Authors: Song, Yujie, Chen, Wangqiao, Lim, Xiao Ming, Hu, Xiao, Liu, Ming, Zhang, Qichun
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Materials; NIR Reflection; Tunable
• Online Access: https://hdl.handle.net/10356/151251
• Institution: Nanyang Technological University

NIR reflective materials have been actively explored towards various applications in both civilian and military fields. The complexity of various factors that influence the NIR reflection behavior has made it a challenging task to establish a clear relationship between doping elements and the reflection performance, which should provide a general guideline to prepare new materials. In this study, for the first time, by minimizing the influence of extrinsic factors, we established the relationship between the electronic configuration in the outset orbitals of the doping metals and the NIR reflectance of doped YMn0.9M0.1O3, and found that the number of unpaired electrons in the outset 3d orbitals of the doping transition metals play an important role in tuning the NIR reflectance. We believe that our research would provide a new instruction to tailor the NIR reflection performance in the realm of inorganic materials.