Enhanced metal-insulator transition in freestanding VO2 down to 5 nm thickness

Enhanced metal-insulator transition in freestanding VO2 down to 5 nm thickness

Ultrathin freestanding membranes with a pronounced metal–insulator transition (MIT) have huge potential for future flexible electronic applications as well as provide a unique aspect for the study of lattice–electron interplay. However, the reduction of the thickness to an ultrathin region (a few nm...

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Bibliographic Details
Main Authors: Han, Kun, Wu, Liang, Cao, Yu, Wang, Hanyu, Ye, Chen, Huang, Ke, Motapothula, M., Xing, Hongna, Li, Xinghua, Qi, Dong-Chen, Li, Xiao, Wang, Renshaw Xiao
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2021
Subjects:
Science::Physics
Vanadium Dioxide
Metal-insulator Transition
Online Access:https://hdl.handle.net/10356/151393
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/151393

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