Study of the leakage behavior of PZT thin film
This Final Year Project discusses primarily about the ferroelectric material lead zirconate titanate. Its unique spontaneous polarization and dielectric properties make it usual for modern storage devices such as NvFRAM and SWNT FET. The project investigates leakage current of the PZT thin film, and...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/10356/15140 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | This Final Year Project discusses primarily about the ferroelectric material lead zirconate titanate. Its unique spontaneous polarization and dielectric properties make it usual for modern storage devices such as NvFRAM and SWNT FET. The project investigates leakage current of the PZT thin film, and fits the results to one or more of the leakage current mechanisms for an insulator. Thereafter, by applying a bias for an elongated time at a fixed high temperature, the shift of point defects (oxygen vacancies) in the film is studied through electrode-PZT interface barrier height measurements. The results are correlated with hysteresis loop shifts before and after the applied bias. |
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