Study of the leakage behavior of PZT thin film

This Final Year Project discusses primarily about the ferroelectric material lead zirconate titanate. Its unique spontaneous polarization and dielectric properties make it usual for modern storage devices such as NvFRAM and SWNT FET. The project investigates leakage current of the PZT thin film, and...

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主要作者: Hoon, Xiao Ping.
其他作者: Wang Junling
格式: Final Year Project
語言:English
出版: 2009
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在線閱讀:http://hdl.handle.net/10356/15140
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