Wafer-scale vertically aligned carbon nanotubes for broadband terahertz wave absorption
Materials with high and broadband absorption characteristics in the terahertz (THz) range are desirable for many applications. In this paper, we propose, fabricate and experimentally demonstrated a wafer-scale vertically aligned carbon nanotube (VACNT) array for broadband THz wave absorption. The ef...
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sg-ntu-dr.10356-1514922021-06-17T03:19:43Z Wafer-scale vertically aligned carbon nanotubes for broadband terahertz wave absorption Sun, Leimeng Zhu, Minmin Zhao, Chun Song, Peiyi Wang, Yurong Xiao, Dongyang Liu, Huafeng Tsang, Siu Hon Teo, Edwin Hang Tong Hu, Fangjing Tu, Liangcheng School of Electrical and Electronic Engineering Temasek Laboratories @ NTU Centre for Micro-/Nano-electronics (NOVITAS) Engineering::Electrical and electronic engineering Carbon Nanotubes Cost Effectiveness Materials with high and broadband absorption characteristics in the terahertz (THz) range are desirable for many applications. In this paper, we propose, fabricate and experimentally demonstrated a wafer-scale vertically aligned carbon nanotube (VACNT) array for broadband THz wave absorption. The effects of VACNT parameters on the absorption performance are investigated within the THz and infrared spectra using the Maxwell-Garnett theory, revealing that the absorption in the THz range can be greatly enhanced by suitable selections of the length, volume fraction and vertical alignment factor of CNTs. A VACNT array with an average CNT length of ∼600 μm is fabricated on a 4-inch silicon substrate. Experimental results measured by a THz time-domain spectroscopic system show an average power absorptance of ∼98% from 0.3 to 2.5 THz, and agree well with the numerical modelling. This device can be used as a cost-effective near-perfect absorber across the THz and infrared regions for thermal emission and imaging, electromagnetic interference shielding, stealth and energy harvesting applications. This work was partially supported by the National Key R&D Program of China (Grant No. 2018YFC0603301), the National Natural Science Foundation of China (Grant No. 61801185), and HUST Key Innovation Team Foundation for Interdisciplinary Promotion (Grant No. 2016JCTD102). We thank Kejia Wang and Yue Song at the Wuhan National Laboratory for Optoelectronics at HUST for their assistance in THz-TDS measurements. 2021-06-17T03:19:43Z 2021-06-17T03:19:43Z 2019 Journal Article Sun, L., Zhu, M., Zhao, C., Song, P., Wang, Y., Xiao, D., Liu, H., Tsang, S. H., Teo, E. H. T., Hu, F. & Tu, L. (2019). Wafer-scale vertically aligned carbon nanotubes for broadband terahertz wave absorption. Carbon, 154, 503-509. https://dx.doi.org/10.1016/j.carbon.2019.08.001 0008-6223 0000-0001-8701-3477 https://hdl.handle.net/10356/151492 10.1016/j.carbon.2019.08.001 2-s2.0-85071028778 154 503 509 en Carbon © 2019 Elsevier Ltd. All rights reserved. |
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Engineering::Electrical and electronic engineering Carbon Nanotubes Cost Effectiveness Sun, Leimeng Zhu, Minmin Zhao, Chun Song, Peiyi Wang, Yurong Xiao, Dongyang Liu, Huafeng Tsang, Siu Hon Teo, Edwin Hang Tong Hu, Fangjing Tu, Liangcheng Wafer-scale vertically aligned carbon nanotubes for broadband terahertz wave absorption |
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Materials with high and broadband absorption characteristics in the terahertz (THz) range are desirable for many applications. In this paper, we propose, fabricate and experimentally demonstrated a wafer-scale vertically aligned carbon nanotube (VACNT) array for broadband THz wave absorption. The effects of VACNT parameters on the absorption performance are investigated within the THz and infrared spectra using the Maxwell-Garnett theory, revealing that the absorption in the THz range can be greatly enhanced by suitable selections of the length, volume fraction and vertical alignment factor of CNTs. A VACNT array with an average CNT length of ∼600 μm is fabricated on a 4-inch silicon substrate. Experimental results measured by a THz time-domain spectroscopic system show an average power absorptance of ∼98% from 0.3 to 2.5 THz, and agree well with the numerical modelling. This device can be used as a cost-effective near-perfect absorber across the THz and infrared regions for thermal emission and imaging, electromagnetic interference shielding, stealth and energy harvesting applications. |
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School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Sun, Leimeng Zhu, Minmin Zhao, Chun Song, Peiyi Wang, Yurong Xiao, Dongyang Liu, Huafeng Tsang, Siu Hon Teo, Edwin Hang Tong Hu, Fangjing Tu, Liangcheng |
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Article |
author |
Sun, Leimeng Zhu, Minmin Zhao, Chun Song, Peiyi Wang, Yurong Xiao, Dongyang Liu, Huafeng Tsang, Siu Hon Teo, Edwin Hang Tong Hu, Fangjing Tu, Liangcheng |
author_sort |
Sun, Leimeng |
title |
Wafer-scale vertically aligned carbon nanotubes for broadband terahertz wave absorption |
title_short |
Wafer-scale vertically aligned carbon nanotubes for broadband terahertz wave absorption |
title_full |
Wafer-scale vertically aligned carbon nanotubes for broadband terahertz wave absorption |
title_fullStr |
Wafer-scale vertically aligned carbon nanotubes for broadband terahertz wave absorption |
title_full_unstemmed |
Wafer-scale vertically aligned carbon nanotubes for broadband terahertz wave absorption |
title_sort |
wafer-scale vertically aligned carbon nanotubes for broadband terahertz wave absorption |
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2021 |
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https://hdl.handle.net/10356/151492 |
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1703971174195658752 |