Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection
High-performance uncooled millimetre and terahertz wave detectors are required as a building block for a wide range of applications. The state-of-the-art technologies, however, are plagued by low sensitivity, narrow spectral bandwidth, and complicated architecture. Here, we report semiconductor surf...
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Engineering::Electrical and electronic engineering Electronics, Photonics and Device Physics Optics and Photonics Tong, Jinchao Suo, Fei Zhang, Tianning Huang, Zhiming Chu, Junhao Zhang, Dao Hua Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection |
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High-performance uncooled millimetre and terahertz wave detectors are required as a building block for a wide range of applications. The state-of-the-art technologies, however, are plagued by low sensitivity, narrow spectral bandwidth, and complicated architecture. Here, we report semiconductor surface plasmon enhanced high-performance broadband millimetre and terahertz wave detectors which are based on nanogroove InSb array epitaxially grown on GaAs substrate for room temperature operation. By making a nanogroove array in the grown InSb layer, strong millimetre and terahertz wave surface plasmon polaritons can be generated at the InSb–air interfaces, which results in significant improvement in detecting performance. A noise equivalent power (NEP) of 2.2 × 10⁻¹⁴ W Hz⁻½ or a detectivity (D*) of 2.7 × 10¹² cm Hz½ W⁻¹ at 1.75 mm (0.171 THz) is achieved at room temperature. By lowering the temperature to the thermoelectric cooling available 200 K, the corresponding NEP and D* of the nanogroove device can be improved to 3.8 × 10⁻¹⁵ W Hz⁻½ and 1.6 × 10¹³ cm Hz½ W⁻¹, respectively. In addition, such a single device can perform broad spectral band detection from 0.9 mm (0.330 THz) to 9.4 mm (0.032 THz). Fast responses of 3.5 µs and 780 ns are achieved at room temperature and 200 K, respectively. Such high-performance millimetre and terahertz wave photodetectors are useful for wide applications such as high capacity communications, walk-through security, biological diagnosis, spectroscopy, and remote sensing. In addition, the integration of plasmonic semiconductor nanostructures paves a way for realizing high performance and multifunctional long-wavelength optoelectrical devices. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Tong, Jinchao Suo, Fei Zhang, Tianning Huang, Zhiming Chu, Junhao Zhang, Dao Hua |
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Tong, Jinchao Suo, Fei Zhang, Tianning Huang, Zhiming Chu, Junhao Zhang, Dao Hua |
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Tong, Jinchao |
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Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection |
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Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection |
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Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection |
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Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection |
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Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection |
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plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection |
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2021 |
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https://hdl.handle.net/10356/151828 |
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sg-ntu-dr.10356-1518282021-08-08T09:54:21Z Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection Tong, Jinchao Suo, Fei Zhang, Tianning Huang, Zhiming Chu, Junhao Zhang, Dao Hua School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Electronics, Photonics and Device Physics Optics and Photonics High-performance uncooled millimetre and terahertz wave detectors are required as a building block for a wide range of applications. The state-of-the-art technologies, however, are plagued by low sensitivity, narrow spectral bandwidth, and complicated architecture. Here, we report semiconductor surface plasmon enhanced high-performance broadband millimetre and terahertz wave detectors which are based on nanogroove InSb array epitaxially grown on GaAs substrate for room temperature operation. By making a nanogroove array in the grown InSb layer, strong millimetre and terahertz wave surface plasmon polaritons can be generated at the InSb–air interfaces, which results in significant improvement in detecting performance. A noise equivalent power (NEP) of 2.2 × 10⁻¹⁴ W Hz⁻½ or a detectivity (D*) of 2.7 × 10¹² cm Hz½ W⁻¹ at 1.75 mm (0.171 THz) is achieved at room temperature. By lowering the temperature to the thermoelectric cooling available 200 K, the corresponding NEP and D* of the nanogroove device can be improved to 3.8 × 10⁻¹⁵ W Hz⁻½ and 1.6 × 10¹³ cm Hz½ W⁻¹, respectively. In addition, such a single device can perform broad spectral band detection from 0.9 mm (0.330 THz) to 9.4 mm (0.032 THz). Fast responses of 3.5 µs and 780 ns are achieved at room temperature and 200 K, respectively. Such high-performance millimetre and terahertz wave photodetectors are useful for wide applications such as high capacity communications, walk-through security, biological diagnosis, spectroscopy, and remote sensing. In addition, the integration of plasmonic semiconductor nanostructures paves a way for realizing high performance and multifunctional long-wavelength optoelectrical devices. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) Nanyang Technological University Published version J.T. acknowledges support from Nanyang Technological University Presidential Postdoctoral Fellowship. The work is also supported by Ministry of Education (grant no. 2017-T1-002-117 and RG 177/17) and A*Star (grant no. SERC A1883c0002 and SERC 1720700038), Singapore. Z.H. acknowledges support from the China National Science Fund for Distinguished Young Scholars (61625505), Chinese Academy of Sciences (ZDBS-LY- JSC025), and Sino-Russia International Joint Laboratory (18590750500). The device fabrication was carried out at Nanyang NanoFabrication Centre (N2FC). J.T. thanks the help from Dr. Chong Gang Yih, Ms. Ngo Ling Ling, Dr. Yongquan Zeng, Dr. Lin Wu, Dr. Wei Zhou, Dr. Yiming Yin, and Dr. Tao Hu. 2021-08-08T09:54:20Z 2021-08-08T09:54:20Z 2021 Journal Article Tong, J., Suo, F., Zhang, T., Huang, Z., Chu, J. & Zhang, D. H. (2021). Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection. Light: Science & Applications, 10(1), 58-. https://dx.doi.org/10.1038/s41377-021-00505-w 2095-5545 https://hdl.handle.net/10356/151828 10.1038/s41377-021-00505-w 33723206 2-s2.0-85102551127 1 10 58 en 2017-T1-002-117 RG 177/17 SERC A1883c0002 SERC 1720700038 Light: Science & Applications © 2021 The Author(s). Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. application/pdf |