Dual role of Cu-chalcogenide as hole-transporting layer and interface passivator for p–i–n architecture perovskite solar cell

• Main Authors: Sadhu, Anupam, Rai, Monika, Salim, Teddy, Jin, Xin, Tan, Joel Ming Rui, Leow, Shin Woei, Ahmed, Mahmoud Gamal, Magdassi, Shlomo, Mhaisalkar, Subodh Gautam, Wong, Lydia Helena
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Materials::Energy materials; Defects; Inorganic Hole-Transport Layers; Interface Passivation
• Online Access: https://hdl.handle.net/10356/151843
• Institution: Nanyang Technological University

Inorganic hole-transport layers (HTLs) are widely investigated in perovskite solar cells (PSCs) due to their superior stability compared to the organic HTLs. However, in p–i–n architecture when these inorganic HTLs are deposited before the perovskite, it forms a suboptimal interface quality for the...