2.45GHz wide input range CMOS rectifier for RF energy harvesting

2.45GHz wide input range CMOS rectifier for RF energy harvesting

This paper presents a CMOS rectifier operating at 2.45 GHz for RF energy harvesting. The diode forward voltage drop, forward peak current and reverse leakage current issues have been addressed by utilizing a novel DC-boosted biasing technique. The proposed rectifier is implemented in 65 nm 6M/1P sta...

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Bibliographic Details
Main Authors: Lau, Wendy Wee Yee, Siek, Liter
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2021
Subjects:
Engineering::Electrical and electronic engineering
Wireless Power Transfer (WPT)
Energy Harvesting
Online Access:https://hdl.handle.net/10356/152134
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Institution: Nanyang Technological University
Language: English
Description
Summary:This paper presents a CMOS rectifier operating at 2.45 GHz for RF energy harvesting. The diode forward voltage drop, forward peak current and reverse leakage current issues have been addressed by utilizing a novel DC-boosted biasing technique. The proposed rectifier is implemented in 65 nm 6M/1P standard CMOS technology. In simulation, the proposed rectifier achieved peak efficiency of 59.6% with input power of -12 dBm at 2.45 GHz and 29 kΩ output load. PCE greater than 20% can be achieved over an extended input power range of 19 dB from -18 dBm to 1 dBm. The proposed rectifier has sensitivity of -17 dBm for 1 V output voltage.

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