Design implementation and characterization of JFET based color sensors

• Main Author: Arumugam Ashviny
• Other Authors: Poenar Daniel Puiu
• Format: Thesis-Master by Coursework
• Language: English
• Published: Nanyang Technological University 2021
• Subjects: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: https://hdl.handle.net/10356/152543
• Institution: Nanyang Technological University

Optoelectronics have many industrial and commercial applications such as optical sensing, data storage, color sensing etc. This project is set to build, fabricate and analyze the optical characteristics of Junction Field Effect Transistor. The use of field effect transistors in the field of optical and color sensing applications have been gradually increasing and extensively used for research purpose. Good optical properties, good electrical properties, low cost and easy fabrication methods makes it to be widely used in color sensing applications. One such type of transistor, JFET has been taken for study. Absorption coefficient as a function of wavelength is simulated for different width of depletion region using MATLAB software. Conductivity in the central channel region is measured. Subsequently theoretical calculations are performed for ion implantation.