Electrodeposition of indium tin oxide thin film
A new method for producing indium tin oxide (ITO) thin film by electrodeposition of indium chloride and tin chloride precursors has been achieved in this project. The films were annealed at 500°C for 1h to remove the excess metallic elements to form crystalline ITO thin films. XRD analysis showed ty...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project |
| Language: | English |
| Published: |
2009
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/15383 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| id |
sg-ntu-dr.10356-15383 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-153832023-03-04T15:36:44Z Electrodeposition of indium tin oxide thin film Lee, Charlotte Wei Wei. Wong Chee Cheong School of Materials Science and Engineering DRNTU::Engineering::Materials A new method for producing indium tin oxide (ITO) thin film by electrodeposition of indium chloride and tin chloride precursors has been achieved in this project. The films were annealed at 500°C for 1h to remove the excess metallic elements to form crystalline ITO thin films. XRD analysis showed typical patterns of rhombohedra and cubic indium oxide (In2O3) structure for the ITO film formed. This proved the incorporation of Sn into the In2O3 structure. Various parameters such as concentration of precursors, effect of stirring and effect of annealing were varied to investigate their effect on the thin film formed. Bachelor of Engineering (Materials Engineering) 2009-04-28T02:33:09Z 2009-04-28T02:33:09Z 2009 2009 Final Year Project (FYP) http://hdl.handle.net/10356/15383 en 41 p. application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NTU Library |
| collection |
DR-NTU |
| language |
English |
| topic |
DRNTU::Engineering::Materials |
| spellingShingle |
DRNTU::Engineering::Materials Lee, Charlotte Wei Wei. Electrodeposition of indium tin oxide thin film |
| description |
A new method for producing indium tin oxide (ITO) thin film by electrodeposition of indium chloride and tin chloride precursors has been achieved in this project. The films were annealed at 500°C for 1h to remove the excess metallic elements to form crystalline ITO thin films. XRD analysis showed typical patterns of rhombohedra and cubic indium oxide (In2O3) structure for the ITO film formed. This proved the incorporation of Sn into the In2O3 structure. Various parameters such as concentration of precursors, effect of stirring and effect of annealing were varied to investigate their effect on the thin film formed. |
| author2 |
Wong Chee Cheong |
| author_facet |
Wong Chee Cheong Lee, Charlotte Wei Wei. |
| format |
Final Year Project |
| author |
Lee, Charlotte Wei Wei. |
| author_sort |
Lee, Charlotte Wei Wei. |
| title |
Electrodeposition of indium tin oxide thin film |
| title_short |
Electrodeposition of indium tin oxide thin film |
| title_full |
Electrodeposition of indium tin oxide thin film |
| title_fullStr |
Electrodeposition of indium tin oxide thin film |
| title_full_unstemmed |
Electrodeposition of indium tin oxide thin film |
| title_sort |
electrodeposition of indium tin oxide thin film |
| publishDate |
2009 |
| url |
http://hdl.handle.net/10356/15383 |
| _version_ |
1759857039259992064 |