Lingaparthi, R., Dharmarasu, N., Radhakrishnan, K., Zheng, Y., & Engineering, S. o. E. a. E. (2022). Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy.

Lingaparthi, R., Nethaji Dharmarasu, K. Radhakrishnan, Y. Zheng, و School of Electrical and Electronic Engineering. Effects of Si Doping Well Beyond the Mott Transition Limit in GaN Epilayers Grown By Plasma-assisted Molecular Beam Epitaxy. 2022.

Lingaparthi, R., et al. Effects of Si Doping Well Beyond the Mott Transition Limit in GaN Epilayers Grown By Plasma-assisted Molecular Beam Epitaxy. 2022.