Lingaparthi, R., Dharmarasu, N., Radhakrishnan, K., Zheng, Y., & Engineering, S. o. E. a. E. (2022). Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy.

Lingaparthi, R., Nethaji Dharmarasu, K. Radhakrishnan, Y. Zheng, and School of Electrical and Electronic Engineering. Effects of Si Doping Well Beyond the Mott Transition Limit in GaN Epilayers Grown By Plasma-assisted Molecular Beam Epitaxy. 2022.

Lingaparthi, R., et al. Effects of Si Doping Well Beyond the Mott Transition Limit in GaN Epilayers Grown By Plasma-assisted Molecular Beam Epitaxy. 2022.