Ligand exchange and impurity doping in 2D CdSe nanoplatelet thin films and their applications

• Main Authors: Lee, Woo Seok, Kang, Yoon-Gu, Sharma, Manoj, Lee, Yong Min, Jeon, Sanghyun, Sharma, Ashma, Demir, Hilmi Volkan, Han, Myung Joon, Koh, Weon-Kyu, Oh, Soong Ju
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Science::Physics; Engineering::Electrical and electronic engineering; Charge Transport; Doping
• Online Access: https://hdl.handle.net/10356/154995
• Institution: Nanyang Technological University

The effects of halide-ligand exchange and Cu and Ag doping are studied on structural, optical, and electrical properties of four monolayer CdSe nanoplatelet (NPL) and NPL thin films. Combinational study shows that NH4Cl-treatment on CdSe NPL and NPL thin films show tetragonal lattice distortion of NPL, side-to-side attachment between NPLs, bathochromic shift in absorption spectra, and complete quenching of band-edge and dopant-induced emissions. First-principle calculations reveal that Cl creates states below valence band maximum while Ag and Cu dopants create acceptor-like states, explaining the change of their optical property. Field-effect transistors are fabricated to investigate the effect of doping and reduced interplatelet distance on electrical properties of CdSe NPL thin films, demonstrating Cu and Ag dopants mitigate n-type character of CdSe NPL thin films. Temperature-dependent electrical characterization is conducted to further understand charge transport behavior depending on the existence of dopants. This work provides scientific information on the influence of surface chemistry and impurity doping on quantum confined semiconductors and new directions for the design of high-performance nanomaterial-based electronic and optoelectronic devices.