Fabrication and characterization of pulsed-laser-deposition-grown all-inorganic halide perovskite thin films
Continuous and crack free CsPbBr3 thin films with superior stimulated emission are an ideal platform for on-chip semiconductor lasers. So far, most applied fabrication methods of CsPbBr3 films are based on solution process. Conventional solution prepared CsPbBr3 films are limited by unavoidable pinh...
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| Format: | Thesis-Doctor of Philosophy |
| Language: | English |
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Nanyang Technological University
2022
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| Online Access: | https://hdl.handle.net/10356/155631 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Continuous and crack free CsPbBr3 thin films with superior stimulated emission are an ideal platform for on-chip semiconductor lasers. So far, most applied fabrication methods of CsPbBr3 films are based on solution process. Conventional solution prepared CsPbBr3 films are limited by unavoidable pinholes, low solubility in solvents and poor morphology. In this research, I integrate a one-step pulsed laser deposition (PLD) with CsPbBr3 to fabricate high crystalline and coverage films. Low threshold stimulated emission is achieved from the thin films at room temperature in air without relying on any quantum confinement formation. Through standard Variable Stripe Length (VSL) methods, a gain coefficient of 440 ± 30 cm-1 can be derived. |
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