Solid-ionic memory in a van der Waals heterostructure

• Main Authors: Chen, Jieqiong, Guo, Rui, Wang, Xiaowei, Zhu, Chao, Cao, Guiming, You, Lu, Duan, Ruihuan, Hadke, Shreyash Sudhakar, Cao, Xun, Salim, Teddy, Buenconsejo, Pio John, Xu, Manzhang, Zhao, Xiaoxu, Zhou, Jiadong, Deng, Ya, Zeng, Qingsheng, Wong, Lydia Helena, Chen, Jingsheng, Liu, Fucai, Liu, Zheng
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Electrical and electronic engineering::Nanoelectronics; Engineering::Materials::Microelectronics and semiconductor materials::Thin films; Oxygen Vacancy; Solid-Ionic Transistor
• Online Access: https://hdl.handle.net/10356/155872
• Institution: Nanyang Technological University

Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS2/BiF...