PdPSe : component-fusion-based topology designer of two-dimensional semiconductor

• Main Authors: Duan, Ruihuan, Zhu, Chao, Zeng, Qingsheng, Wang, Xiaowei, Gao, Yang, Deng, Ya, He, Yanchao, Yang, Jiefu, Zhou, Jiadong, Xu, Manzhang, Liu, Zheng
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Materials; Component Fusion; Field-Effect Transistors
• Online Access: https://hdl.handle.net/10356/155873
• Institution: Nanyang Technological University

Novel 2D semiconductors play an increasingly important role in modern nanoelectronics and optoelectronics. Herein, a novel topology designer based on component fusion is introduced, featured by the submolecular component integration and properties inheritance. As expected, a new air-stable 2D semiconductor PdPSe with a tailored puckered structure is successfully designed and synthesized via this method. Notably, the monolayer of PdPSe is constructed by two sublayers via PP bonds, different from 2D typical transition metal materials with sandwich-structured monolayers. With the expected orthorhombic symmetry and intralayer puckering, PdPSe displays a strong Raman anisotropy. The field-effect transistors and photodetectors based on few-layer PdPSe demonstrate good electronic properties with high carrier mobility of ≈35 cm2 V−1 s−1 and a high on/off ratio of 106, as well as excellent optoelectronic performance, including high photoresponsivity, photogain, and detectivity with values up to 1.06 × 105 A W−1, 2.47 × 107%, and 4.84 × 1010 Jones, respectively. These results make PdPSe a promising air-stable 2D semiconductor for various electronic and optoelectronic applications. This work suggests that the component-fusion-based topology designer is a novel approach to tailor 2D materials with expected structures and interesting properties.