Donor-acceptor pair quantum emitters in hexagonal boron nitride
Quantum emitters are needed for a myriad of applications ranging from quantum sensing to quantum computing. Hexagonal boron nitride (hBN) quantum emitters are one of the most promising solid-state platforms to date due to their high brightness and stability and the possibility of a spin-photon inter...
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sg-ntu-dr.10356-1560112023-02-28T20:02:04Z Donor-acceptor pair quantum emitters in hexagonal boron nitride Tan, Qinghai Lai, Jia-Min Liu, Xue-Lu Guo, Dan Xue, Yongzhou Dou, Xiuming Sun, Bao-Quan Deng, Hui-Xiong Tan, Ping-Heng Aharonovich, Igor Gao, Weibo Zhang, Jun School of Physical and Mathematical Sciences Science::Physics::Optics and light Hexagonal Boron Nitride Single-Photon Emitters Quantum emitters are needed for a myriad of applications ranging from quantum sensing to quantum computing. Hexagonal boron nitride (hBN) quantum emitters are one of the most promising solid-state platforms to date due to their high brightness and stability and the possibility of a spin-photon interface. However, the understanding of the physical origins of the single-photon emitters (SPEs) is still limited. Here we report dense SPEs in hBN across the entire visible spectrum and present evidence that most of these SPEs can be well explained by donor-acceptor pairs (DAPs). On the basis of the DAP transition generation mechanism, we calculated their wavelength fingerprint, matching well with the experimentally observed photoluminescence spectrum. Our work serves as a step forward for the physical understanding of SPEs in hBN and their applications in quantum technologies. Ministry of Education (MOE) National Research Foundation (NRF) Submitted/Accepted version J.Z. acknowledges support from the National Basic Research Program of China (grant no. 2017YFA0303401, 2016YFA0301200), Beijing Natural Science Foundation (JQ18014), and Strategic Priority Research Program of Chinese Academy of Sciences (grant no. XDB28000000) and CAS Interdisciplinary Innovation team. W.G. acknowledges the Singapore National Research Foundation and DSO National Laboratories under the QEP grants NRF2021- QEP2-03-P01, 2019-0643 (QEP-P2), and 2019-1321 (QEPP3), CRP award nos. NRF-CRP21-2018-0007, NRF-CRP22- 2019-0004, and NRF-CRP23-2019-0002, and the Singapore Ministry of Education (MOE2016-T3-1-006 (S)). I.A. acknowledges the financial support from the Australian Research Council (via CE200100010). 2022-03-30T08:34:05Z 2022-03-30T08:34:05Z 2022 Journal Article Tan, Q., Lai, J., Liu, X., Guo, D., Xue, Y., Dou, X., Sun, B., Deng, H., Tan, P., Aharonovich, I., Gao, W. & Zhang, J. (2022). Donor-acceptor pair quantum emitters in hexagonal boron nitride. Nano Letters, 22(3), 1331-1337. https://dx.doi.org/10.1021/acs.nanolett.1c04647 1530-6992 https://hdl.handle.net/10356/156011 10.1021/acs.nanolett.1c04647 35073101 2-s2.0-85124119430 3 22 1331 1337 en NRF2021- QEP2-03-P01 2019-0643 (QEP-P2) 2019-1321 (QEPP3) NRF-CRP21-2018-0007 NRF-CRP22- 2019-0004 NRF-CRP23-2019-0002 MOE2016-T3-1-006 Nano Letters This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.1c04647. application/pdf |
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Science::Physics::Optics and light Hexagonal Boron Nitride Single-Photon Emitters |
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Science::Physics::Optics and light Hexagonal Boron Nitride Single-Photon Emitters Tan, Qinghai Lai, Jia-Min Liu, Xue-Lu Guo, Dan Xue, Yongzhou Dou, Xiuming Sun, Bao-Quan Deng, Hui-Xiong Tan, Ping-Heng Aharonovich, Igor Gao, Weibo Zhang, Jun Donor-acceptor pair quantum emitters in hexagonal boron nitride |
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Quantum emitters are needed for a myriad of applications ranging from quantum sensing to quantum computing. Hexagonal boron nitride (hBN) quantum emitters are one of the most promising solid-state platforms to date due to their high brightness and stability and the possibility of a spin-photon interface. However, the understanding of the physical origins of the single-photon emitters (SPEs) is still limited. Here we report dense SPEs in hBN across the entire visible spectrum and present evidence that most of these SPEs can be well explained by donor-acceptor pairs (DAPs). On the basis of the DAP transition generation mechanism, we calculated their wavelength fingerprint, matching well with the experimentally observed photoluminescence spectrum. Our work serves as a step forward for the physical understanding of SPEs in hBN and their applications in quantum technologies. |
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School of Physical and Mathematical Sciences |
author_facet |
School of Physical and Mathematical Sciences Tan, Qinghai Lai, Jia-Min Liu, Xue-Lu Guo, Dan Xue, Yongzhou Dou, Xiuming Sun, Bao-Quan Deng, Hui-Xiong Tan, Ping-Heng Aharonovich, Igor Gao, Weibo Zhang, Jun |
format |
Article |
author |
Tan, Qinghai Lai, Jia-Min Liu, Xue-Lu Guo, Dan Xue, Yongzhou Dou, Xiuming Sun, Bao-Quan Deng, Hui-Xiong Tan, Ping-Heng Aharonovich, Igor Gao, Weibo Zhang, Jun |
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Tan, Qinghai |
title |
Donor-acceptor pair quantum emitters in hexagonal boron nitride |
title_short |
Donor-acceptor pair quantum emitters in hexagonal boron nitride |
title_full |
Donor-acceptor pair quantum emitters in hexagonal boron nitride |
title_fullStr |
Donor-acceptor pair quantum emitters in hexagonal boron nitride |
title_full_unstemmed |
Donor-acceptor pair quantum emitters in hexagonal boron nitride |
title_sort |
donor-acceptor pair quantum emitters in hexagonal boron nitride |
publishDate |
2022 |
url |
https://hdl.handle.net/10356/156011 |
_version_ |
1759854007512203264 |