White-light driven resonant emission from a monolayer semiconductor
Resonant emission in photonic structures is very useful to construct all-photonic circuits for optical interconnects and quantum computing. Optical generation of most resonant emitting modes in photonic structures has been obtained by coherent pumping rather than incoherent illumination. Particularl...
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Science::Physics::Atomic physics::Solid state physics Science::Physics::Optics and light Resonant Emission 2D Semiconductors White-Light Pumping |
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Science::Physics::Atomic physics::Solid state physics Science::Physics::Optics and light Resonant Emission 2D Semiconductors White-Light Pumping Shang, Jingzhi Wu, Lishu Feng, Shun Chen, Yu Zhang, Hongbo Cong, Chunxiao Huang, Wei Yu, Ting White-light driven resonant emission from a monolayer semiconductor |
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Resonant emission in photonic structures is very useful to construct all-photonic circuits for optical interconnects and quantum computing. Optical generation of most resonant emitting modes in photonic structures has been obtained by coherent pumping rather than incoherent illumination. Particularly, the development of white-light or even solar-powered on-chip light sources remains challenging but is very attractive in view of the much facile availability of these incoherent excitation sources. Here the net resonant emission from monolayer semiconductor has been demonstrated under the simulated solar illumination by a white light-emitting diode. The device is formed by embedding a two-dimensional gain medium into a planar microcavity on a silicon wafer, which is compatible with the prevailing on-chip photonic technology. Coherent and white-light excitation sources are respectively selected for optical pumping, where the output light in two cases exhibits the well-consistent resonant wavelength, linewidth, polarization, location, and Gaussian-beam profile. The fundamental TEM00 mode behaves a doublet emission, resulting from anisotropy-induced nondegenerate states with orthogonal polarizations. The extraordinary spectral flipping is attributed to the competitive interplay of resonant absorption and emission. This work paves a way towards white-light or solar-powered state-of-the-art photonic applications at the chip scale. This article is protected by copyright. All rights reserved. |
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School of Physical and Mathematical Sciences |
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School of Physical and Mathematical Sciences Shang, Jingzhi Wu, Lishu Feng, Shun Chen, Yu Zhang, Hongbo Cong, Chunxiao Huang, Wei Yu, Ting |
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Shang, Jingzhi Wu, Lishu Feng, Shun Chen, Yu Zhang, Hongbo Cong, Chunxiao Huang, Wei Yu, Ting |
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Shang, Jingzhi |
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White-light driven resonant emission from a monolayer semiconductor |
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White-light driven resonant emission from a monolayer semiconductor |
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White-light driven resonant emission from a monolayer semiconductor |
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White-light driven resonant emission from a monolayer semiconductor |
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White-light driven resonant emission from a monolayer semiconductor |
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white-light driven resonant emission from a monolayer semiconductor |
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sg-ntu-dr.10356-1560482023-02-28T20:03:18Z White-light driven resonant emission from a monolayer semiconductor Shang, Jingzhi Wu, Lishu Feng, Shun Chen, Yu Zhang, Hongbo Cong, Chunxiao Huang, Wei Yu, Ting School of Physical and Mathematical Sciences Science::Physics::Atomic physics::Solid state physics Science::Physics::Optics and light Resonant Emission 2D Semiconductors White-Light Pumping Resonant emission in photonic structures is very useful to construct all-photonic circuits for optical interconnects and quantum computing. Optical generation of most resonant emitting modes in photonic structures has been obtained by coherent pumping rather than incoherent illumination. Particularly, the development of white-light or even solar-powered on-chip light sources remains challenging but is very attractive in view of the much facile availability of these incoherent excitation sources. Here the net resonant emission from monolayer semiconductor has been demonstrated under the simulated solar illumination by a white light-emitting diode. The device is formed by embedding a two-dimensional gain medium into a planar microcavity on a silicon wafer, which is compatible with the prevailing on-chip photonic technology. Coherent and white-light excitation sources are respectively selected for optical pumping, where the output light in two cases exhibits the well-consistent resonant wavelength, linewidth, polarization, location, and Gaussian-beam profile. The fundamental TEM00 mode behaves a doublet emission, resulting from anisotropy-induced nondegenerate states with orthogonal polarizations. The extraordinary spectral flipping is attributed to the competitive interplay of resonant absorption and emission. This work paves a way towards white-light or solar-powered state-of-the-art photonic applications at the chip scale. This article is protected by copyright. All rights reserved. Ministry of Education (MOE) National Research Foundation (NRF) Submitted/Accepted version T.Y. acknowledges the support by the Ministry of Education of Singapore (MOE 2019-T2-1-044) and the Singapore National Research Foundation (NRF) under the Competitive Research Programs (NRF-CRP-21-2018-0007). J. S. appreciates the support of the Fundamental Research Funds for the Central Universities of China, National Natural Science Foundation of China under Grant No. 61904151, Natural Science Foundation of Shaanxi under Grant No. 2020 JM-108 and the Joint Research Funds of Department of Science & Technology of Shaanxi Province and Northwestern Polytechnical University (2020GXLH-Z-020). C.X. thanks the support of the National Natural Science Foundation of China (61774040), the National Key R&D Program of China (2018YFA0703700), the Shanghai Municipal Science and Technology Commission (18JC1410300), the Fudan University-CIOMP Joint Fund (Grant No. FC2018-002), the National Young 1000 Talent Plan of China, and the Shanghai Municipal Natural Science Foundation (20ZR140320016ZR1402500).W.H. thanks the support of the Ministry of Education of China (IRT1148), Synergetic Innovation Center for Organic Electronics and Information Displays (61136003), National Natural Science Foundation of China (51173081), and Fundamental Studies of Perovskite Solar Cells (2015CB932200).S. F. is supported by H2020-MSCA-IF-2020 SingExTr (No. 101031596). 2022-04-01T02:35:19Z 2022-04-01T02:35:19Z 2022 Journal Article Shang, J., Wu, L., Feng, S., Chen, Y., Zhang, H., Cong, C., Huang, W. & Yu, T. (2022). White-light driven resonant emission from a monolayer semiconductor. Advanced Materials. https://dx.doi.org/10.1002/adma.202103527 0935-9648 https://hdl.handle.net/10356/156048 10.1002/adma.202103527 35129854 en MOE 2019-T2-1-044 NRF-CRP-21-2018-0007 Advanced Materials This is the peer reviewed version of the following article: Shang, J., Wu, L., Feng, S., Chen, Y., Zhang, H., Cong, C., Huang, W. & Yu, T. (2022). White-light driven resonant emission from a monolayer semiconductor. Advanced Materials, which has been published in final form at https://doi.org/10.1002/adma.202103527. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. application/pdf |